Miniature electric near-field probes for measuring 3-D fields in planar microwave circuits

Gao, Yingjie; Wolff, I.

doi:10.1109/22.701442

Cited by 66 publications

(10 citation statements)

References 11 publications

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“…Due to the radiation electric field obtained by the electromagnetic field model and the output voltage obtained by the oscilloscope during the near field test, the simulation results need to convert into the radiation voltage for better comparison. 18 Accordingly, based on the structure and the measurement principle of the electric near-field probe 26,27 and the resistance of the oscilloscope during near-field tests, a transfer function model was developed, as shown in Figure 4A.…”

Section: Model Developmentmentioning

confidence: 99%

“…The current source i is the induced current in the capacitor, and can be calculated using the below equation. 26,27 i t…”

Section: Model Developmentmentioning

confidence: 99%

“…The electric near‐field probe consists of an extended inner conductor with a length of L mm at the top of the electric near‐field probe and a section of coaxial line. The electric near‐field probe is a capacitive probe in principle, 26 and the capacitance will be generated between the extended inner conductor and the outer conductor. The extended inner conductor couples the external radiation electric field and the induced current propagates through the coaxial section and the oscilloscope.…”

Section: Transfer Function Model Developmentmentioning

confidence: 99%

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Impact of impedance compensation structure in coaxial‐microstrip transition section on near‐field radiation

Zhang

Gao

Wang

et al. 2023

Micro & Optical Tech Letters

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Coaxial‐microstrip transition sections are extensively used in radio frequency (RF) circuits, providing electrical interconnection and signal transmission. However, an antipad used for impedance compensation in the coaxial‐microstrip transition section leads to signal return path discontinuity and radiation emission. Accordingly, in this current work, the impact of impedance compensation structure on the near‐field radiation in the coaxial‐microstrip transition section was investigated by theoretical analysis and experimental testing. A 3D electromagnetic field model of a circuit board with an anti‐pad was developed to calculate the S‐parameters and radiation electric field. Based on the characteristics of the electric near‐field probe, a transfer function model was also developed to convert the radiation electric field obtained by the electromagnetic field model into the output voltage for better comparison with the test results. In addition, the effect of the rise time of the input signal on near‐electric field radiation was also studied in this work. The experimental results are in good agreement with the simulation results obtained from the transfer function model. The results of this study provide a better understanding of the electromagnetic radiation characteristics caused by the impedance compensation structure and theoretical support for compensation optimization strategy in engineering.

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Section: Model Developmentmentioning

confidence: 99%

“…The current source i is the induced current in the capacitor, and can be calculated using the below equation. 26,27 i t…”

Section: Model Developmentmentioning

confidence: 99%

Section: Transfer Function Model Developmentmentioning

confidence: 99%

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Impact of impedance compensation structure in coaxial‐microstrip transition section on near‐field radiation

Zhang

Gao

Wang

et al. 2023

Micro & Optical Tech Letters

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“…where the measured value is expressed as electric current based on the consideration that the current is induced due to the electric near-field [1]. The probe height h p for I 1 in the measurements is fixed to 0 mm, and the height for I 2 is set to h p þ d p , where the displacement d p is varied from 0.1 to 0.7 mm.…”

Section: Fringe Capacitance Modelmentioning

confidence: 99%

“…Electric near-field measurements are one of the essential techniques for revealing the RF behavior of electronics by visualizing the field distributions, especially in the area of electromagnetic compatibility [1,2]. The spatial resolution for such near-field measurements is one of key performance parameters.…”

Section: Introductionmentioning

confidence: 99%

Improved position-signal-difference electric near-field measurements based on fringe capacitance model

Funato

Sügimura

Suhara

2014

IEICE Electron. Express

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An approach based on the analytical expressions of the fringe capacitance for describing the spatial resolution for Position Signal Difference (PSD) electric near-field measurements is addressed in this paper. The calculated full width at half maximum (FWHM) of the measured results by using PSD for the scanning over microstrip line using the proposed model were in good agreement with the measurement results. Furthermore, a new measurement technique for obtaining more accurate results of a normal component of electric near-field by eliminating the fringe capacitance is proposed. The demonstrated results when using the proposed method showed a better correlation to the simulated normal component of electric field than using conventional PSD. Finally, the role of probe displacement for Double Position Signal Difference (DPSD) measurements is also clarified by verifying the measurements using the electromagnetic simulated results.

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MMIC's characterization by very near‐field technique

Nativel¹,

Marchetti²,

Falgayrettes³

et al. 2004

Micro & Optical Tech Letters

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This paper shows a method to characterize microwave circuits using a near-field scanning microscope. Applied on various samples, it shows good resolution and weak disturbance for ICs operating with very common microwave components. Here, it is applied in an industrial INTRODUCTIONToday, in order to increase the MMIC bandwidth, it is necessary to decrease the scale factor down to the micrometer range. Consequently, the characterization of these devices becomes increasingly difficult or impossible. Due to the complexity of the circuit layout, electromagnetic simulators are unusable or ineffective. Some solutions have been proposed: Black et al. [1] built up a radiofrequency bench with a S.QU.I.D. that maps the magnetic field above a sample surface up to a few GHz. Another electromagnetic near-field mapping setup based on an electro-optic probe was proposed by Yang et al. [2] for up to 20 GHz. Keilmann et al. [3] proposed a setup that works in transmission mode with coaxial probes, allowing high-subwavelength resolution to be reached. Other works have been reported in [4 -8], where resonant coaxial line or waveguide was used to determine electromagnetic properties such as dielectric function, near-field polarimetry, or resistivity. Budka et al.[9] presented a modulated perturbation technique, which is an indirect method to map the electromagnetic field: the device under test (D.U.T.) is disturbed by a low-frequency modulated signal in its near-field range. In the work of Y. Gao and I. Wolff [10,11], a collection-scanning setup is proposed to diagnose high-frequencies circuits. These methods are either expensive (electro-optic sampling method), restrictive (low-temperature operation when using the S.QU.I.D., not broadband for resonnant cavities or waveguides, and map-only passive devices), or have a more complex setup (modulated perturbation method, use of a Vector Network Analyzer).In this paper, we present a collection method and a setup to map the electromagnetic near-field of active or passive microwave circuits by miniature coaxial cable, similar to Gao et al., but with no need of a Vector Network Analyzer (VNA) This setup also allows the mapping of the electromagnetic field near a self-emitting sample. It is a relatively simple setup, since it uses only common HF components (such as amplifiers and quadratic detectors). It is also a nondestructive method, as it works without contact to measure the different electromagnetic-field components based on the antennas's shape. The D.U.T. can be as complex as possible; the setup simply collects the electromagnetic near-field above its surface. The resolution reached is about 10 micrometers and the frequency range is from 0.01 to 20 GHz (limited by the amplifiers bandwidth). This paper also presents evaluations of the probe disturbance in the near-field zone for running ICs and industrial applications with this setup. EXPERIMENTAL SETUPThe D.U.T. is placed on a micrometric displacement table driven by a computer (see Fig. 1). This configuration enables us t...

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Miniature electric near-field probes for measuring 3-D fields in planar microwave circuits

Cited by 66 publications

References 11 publications

Impact of impedance compensation structure in coaxial‐microstrip transition section on near‐field radiation

Impact of impedance compensation structure in coaxial‐microstrip transition section on near‐field radiation

Improved position-signal-difference electric near-field measurements based on fringe capacitance model

MMIC's characterization by very near‐field technique

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