1998 28th European Microwave Conference 1998
DOI: 10.1109/euma.1998.338105
|View full text |Cite
|
Sign up to set email alerts
|

Miniaturised GaAs PHEMT Power Amplifiers at Ka-and Q-band using Capacitively Loaded Coplanar Transmission Lines

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

1999
1999
2000
2000

Publication Types

Select...
2
1

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 0 publications
0
3
0
Order By: Relevance
“…2. As well, the use of capacitively loaded transmission lines could successfully be exploited in K, Q, V and W-band to realize compact couplers and power amplifiers [9,10]. Low noise amplifiers…”
Section: Passive Componentsmentioning
confidence: 99%
See 2 more Smart Citations
“…2. As well, the use of capacitively loaded transmission lines could successfully be exploited in K, Q, V and W-band to realize compact couplers and power amplifiers [9,10]. Low noise amplifiers…”
Section: Passive Componentsmentioning
confidence: 99%
“…These MIM capacitors can also be integrated into coplanar bends and T-junctions, resulting in a further reduction of the chip size [1OJ. Additionally the model of the T-junction or bend can be simplified to the combination of the shunt MIM capacitance and the connecting airbridges [10].…”
Section: Local Oscillator Power [Dbm]mentioning
confidence: 99%
See 1 more Smart Citation