Miniaturization and Power Scaling of Fundamental Mode Optically Pumped Semiconductor Lasers

Hunziker, Lukas E.; Ihli, Chris; Steingrube, Daniel S.

doi:10.1109/jstqe.2007.896631

Cited by 10 publications

(14 citation statements)

References 16 publications

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“…Applying similar design principles, but using a combination of large pump spot sizes (0.5-0.9 mm) and thin-devices on diamond submounts for heat removal, very impressive performance from ∼ 980 nm and 1060 nm SDLs have been achieved [14,46,76,77]. The highest powers recorded to-date reach 30 W at 980 nm with a multimode beam (M 2 ∼ 3) [14] and 12 W at 1060 nm with TEM 00 emission [77]. From these results, it can be understood that for devices which present a low thermal resistance mirror, the two thermal management techniques have led to comparable single transverse mode performance but with very different mode sizes.…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

“…As shown in reference [77], as long as the laser cavity is chosen to be longer than the Rayleigh range in the nonlinear crystal, it is possible to construct, using a Keplerian or a Galilean telescopic arrangement, a cavity which is dynamically stable at the semiconductor chip. The cavity length limitation is thus related to the nonlinear crystal characteristics, in particular its damage threshold and acceptance angle.…”

Section: Compact Modulesmentioning

confidence: 99%

“…The cavity length limitation is thus related to the nonlinear crystal characteristics, in particular its damage threshold and acceptance angle. As a practical validation, a 486 nm SHG SDL using a 3 mmlong LBO crystal and a 15 mm-long cavity was built [77]. TEM 00 emission with up to 7.3 W of pump-power limited output was achieved.…”

Section: Compact Modulesmentioning

confidence: 99%

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Section: Nm-1100 Nm Sdlsmentioning

confidence: 99%

Section: Compact Modulesmentioning

confidence: 99%

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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show abstract

“…If pump power available from a single pump diode is limited, multiple pump diodes can be used with multiple pump beams incident on a single VECSEL chip from different angles. When heat dissipation from a single semiconductor chip becomes the limiting factor, further scaling of optical power is possible by arranging multiple semiconductor gain chips within a single VECSEL laser cavity and reflecting the laser beam sequentially from these reflecting vertical amplifier chips [22,[49][50][51][52]. All of these factors combined make it possible to scale optically pumped VECSEL power by the demonstrated four orders of magnitude, and potentially more in the future.…”

Section: Power Scalingmentioning

confidence: 99%

“…On the other hand, such an external cavity gives tremendous versatility to VECSEL device configurations and functions. Flexible VECSEL laser cavities, such as linear twomirror cavity, three-mirror V-shaped cavity, and four-mirror Z-shaped cavity [18,20,[49][50][51][52][53][54], allow flexible insertion of intracavity optical elements. Such intracavity functional elements are very difficult or impossible to use with integrated semiconductor devices.…”

Section: Laser Functional Versatility Through Intracavity Optical Elementioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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15.2 Optically pumped semiconductor disk lasers

Unger¹

2011

Laser Systems

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Miniaturization and Power Scaling of Fundamental Mode Optically Pumped Semiconductor Lasers

Cited by 10 publications

References 16 publications

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

15.2 Optically pumped semiconductor disk lasers

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