Miniaturized InSb photovoltaic infrared sensor operating at room temperature

An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells

“…The epi-layers consist of a GaSb buffer layer, a 3-µm n-type doping layer, followed by a 1-µm undoped active layer and a 0.5-µm p-type layer. A 20-nm p-type Al 0.2 In 0.8 Sb barrier layer was grown between the p−layer and active layer in order to reduce carrier leakage [3,4]. The investigated DH bulk structure is shown in Table 2.…”

“…Semiconductor materials such as antimonide emitting in the 3-5 µm mid-infrared band are of great interest for the development of a low-cost photonic technology for the next generation of miniature and energy-efficient CO, CO 2 , CH 4 gas sensors [1]. A well-established and cost effective approach is to directly grow the antimonide-based epilayer on a GaAs substrate.…”

“…A buffer layer several µm thick is grown on top of the wafer to accommodate the large lattice mismatch [2]. Standard epilayer designs for LEDs employ a homojunction active region in combination with a relatively wide bandgap barrier between the active region and p-doping layer to reduce carrier leakage [1,3,4]. However, the carrier leakage in a homojunction design is still a major problem because of the efficiency droop under a high current density [5].…”

Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

“…The epi-layers consist of a GaSb buffer layer, a 3-µm lower doping layer, followed by a 1-µm undoped active layer and a 0.5-µm current spreading and contact layer. A 20-nm p-type Al 0.2 In 0.8 Sb barrier layer was grown between the p−layer and active layer in order to reduce carriers' leakage [2,4]. The doping concentration is ~7×10 17 /cm 3 for both n-type and ptype layers and the unintentional background doping concentration in the active region is ~9×10 15 /cm 3 .…”

Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

“…Such dilute nitride III-V compounds have attracted attention in recent years due to realised device applications, including subcells in world record efficiency multi-junction solar cells, as in the case of GaInNAsSb, 1 and potential applications such as light sources and photodetectors in the long-wavelength infrared range. [2][3][4] The property of band gap reduction upon N incorporation has already been observed in GaNAs, 5 GaNP, 6 GaInNAs, 7 InNAs, 8 and GaNSb. 9,10 It has been described in terms of conduction band anticrossing (BAC), wherein a localized nitrogen level interacts with the extended host conduction band.…”