Miniaturized Multilayer CPW pHEMT Amplifiers

Rezazadeh

2019

The main aim of this paper is to investigate the uniformity of pHEMTs small-signal parameters before and after multilayer fabrication in 3D MMICs. Seven samples of pre-and post-multilayer fabricated pHEMTs at different representative locations to reflect the degree of consistency. This study deals with the fabrication, measurement, simulation, and comparison of both sample in form of means and slandered deviation. On wafer scattering (S-) parameter measurement has been accomplished to investigate the small signal equivalent circuit parameters up to 50 GHz. The main finding was observed that all parameters are increased after multilayer fabrication except the transconductance and the parasitic inductances. The employment of the 3D-MMIC technology does not induce any evident extinction of the pHEMTs performance utilizing seven different samples of pre-and post-multilayer fabrication.

Section: Introductionmentioning

confidence: 99%

Uniformity investigation of pHEMTs small-signal parameters for pre and post multilayer fabrication in 3D MMICs

Rezazadeh

2019

“…This would reduce the overall chip size significantly since all the components are arranged in stacks. For instance, the design of multilayer CPW amplifier in [4] has shown 50% reduction in size compared to conventional planar design. Besides that, MMIC limiter based on pHEMT Schottky diodes has the smallest chip size and better insertion loss than previously reported p-i-n diodes [5].…”

Section: Introductionmentioning

confidence: 99%

“…One example of the devices designed and fabricated using verticaloriented MMICs technology is a pHEMT based on AlGaAs/ InGaAs heterojunction. Various works on vertical-oriented pHEMTs are reported in the open literatures which unveiled the reduction in chip size, improved receiver performance and an extended frequency of operation [1][2][3][4][5][6]. Much interest is now on the characterization of active devices in this multilayer CPW MMIC environment.…”

Section: Introductionmentioning

confidence: 99%

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

Ali

Haris

et al. 2017

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s , filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

“…Over the years, there has been a continuous drive to reduce the manufacturing cost. Three-dimensional (3D) multilayer technology has good prospects of being adopted for this purpose, as all the components and circuits are arranged in vertically staggered component layers, which offers significant chip size reduction [1][2][3]. Reducing the chip size is important as compact chips improve the economics of manufacturing by allowing more components to be placed on a single chip reducing the area used.…”

Section: Introductionmentioning

confidence: 99%

“…Reducing the chip size is important as compact chips improve the economics of manufacturing by allowing more components to be placed on a single chip reducing the area used. The performance of the chips can be improved further by monolithic integration of the devices with high performance GaAs monolithic microwave integrated circuits (MMICs)-based active device technology [3,4]. Figure 1 illustrates the implementation of multilayer MMICs on semiinsulating (S-I) GaAs substrate using pseudomorphic high electron mobility transistors (pHEMTs) which are pre-fabricated on top of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

Haris

Kyabaggu

et al. 2017

In this paper, we demonstrate for the first time the implementation of 3-Dimensional (3D) multilayer technology on GaAsbased pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model -Level 3 (TOM3), developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.