Minimizing thick resist sidewall slope dependence on design geometry by optimizing bake conditions

Tuning of resist slope with hard-baking parameters and release methods of extra hard photoresist for RF MEMS switches

“…9 and the data from Puchner et al (Fig. 5; [6]) that the variation of the angle with temperature is sharper in Ref. [6] (large resist pattern) than in our work.…”

“…The initial angle was a little smaller in our experiment than the work presented in Refs. [4,6]. From the experiment it is seen that we can obtain an angle of around 45 • by baking at 115 • C for 120 s. From Tables 2 and 3 it is also seen that the exposure gap has a strong effect on the resist angle, and the resist angle decreases with a higher exposure gap.…”

“…The resist angle depends on the baking time [4], the baking temperature [6] and the exposure gap [7]. The work in [4] aims for a 45 • angle.…”

“…[4] is to obtain the desired angle by varying the baking time. The authors of [6] try to optimize the resist angle by tuning the baking temperature. Ref.…”

“…This is more efficient compared with work published on resist angle tuning by either baking temperature or baking time [4,6]. The exposure gap between the mask and the resist surface could also be optimized to tune the resist angle as mentioned in [7,8].…”