Minimum reaction network necessary to describe Ar/CF4 plasma etch

Helpert, Sofia; Chopra, Meghali; Bonnecaze, Roger T.

doi:10.1117/12.2297502

Advanced Etch Technology for Nanopatterning VII 2018

DOI: 10.1117/12.2297502

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Minimum reaction network necessary to describe Ar/CF4 plasma etch

Sofia Helpert

Meghali Chopra

Roger T. Bonnecaze

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2019

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A global model study of low pressure high density CF₄ discharge

Toneli¹,

Pessoa²,

Roberto³

et al. 2019

Plasma Sources Sci. Technol.

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We present a revised reaction set for low pressure high density CF 4 plasma modelling. A global model (volume averaged) was developed to study a CF 4 discharge that includes the neutral species CF 4 , CF 3 , CF 2 , CF, F 2 , F, and C, the metastable states CF(a 4 Σ − ) and CF 2 ( 3 B 1 ), the positive ions + CF 3 , + CF 2 , CF + , + F 2 , F + , and C + , the negative ions -CF 3 , -F 2 , and F − , and electrons. The main reactions that contribute to the production and loss of each species are pointed out with an emphasis on the radicals CF 2 , CF and F, the dominant positive ion + CF 3 , and the dominant negative ion F − . We find wall processes to have a significant influence on the discharge. The density of F 2 is high due to recombination of F atoms at the walls and the losses of the radicals F, CF, and CF 3 are mainly through wall recombination. As the pressure is increased, F − becomes the dominant negative charged species. The discharge is found to be weakly electronegative below ∼10 mTorr and the electronegativity decreases with increased absorbed power.

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A global model study of low pressure high density CF₄ discharge

Toneli¹,

Pessoa²,

Roberto³

et al. 2019

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

show abstract

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Minimum reaction network necessary to describe Ar/CF4 plasma etch

Cited by 1 publication

References 26 publications

A global model study of low pressure high density CF₄ discharge

A global model study of low pressure high density CF₄ discharge

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Minimum reaction network necessary to describe Ar/CF4 plasma etch

Cited by 1 publication

References 26 publications

A global model study of low pressure high density CF4 discharge

A global model study of low pressure high density CF4 discharge

Contact Info

Product

Resources

About

A global model study of low pressure high density CF₄ discharge

A global model study of low pressure high density CF₄ discharge