Minority carrier capture at <i>DX</i> centers in AlGaSb Schottky diodes

Gombia, E.; Mosca, R.; Franchi, S.; Ghezzi, Carlo; Magnanini, R.

doi:10.1063/1.368783

Cited by 4 publications

(2 citation statements)

References 24 publications

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“…Second, a positive DLTS signal was observed in an AlGaSb Schottky diode when the bias condition was forward ͑V p ϭ0.6 V, V m ϭϪ0.5 V͒ and then disappeared when V m is negative ͑Ϫ0.1 V͒. 24 This was explained by the hole capture at the electron trap. In this work, we have performed DLTS measurements as a function of V p as shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

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Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Choi

Lee

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSurface states on n-type Al 0.24 Ga 0.76 As were studied using capacitance deep-level transient spectroscopy ͑DLTS͒. Two types of hole-like traps ͑labeled as H1 and H2 in this work͒ were observed in a Al 0.24 Ga 0.76 As/In 0.22 Ga 0.78 As pseudomorphic high-electron-mobility transistor with a multifinger gate. But, no hole-like traps were observed in the fat field-effect transistor ͑FATFET͒ having a negligible ratio of the ungated surface to the total area between the source and the drain. This provides evidence that the hole-like trap peaks in the DLTS spectra originated from surface states at the ungated Al 0.24 Ga 0.76 As regions exposed between gate and source/drain electrodes. The activation energies for both surface states were determined to be 0.50Ϯ0.03 and 0.81Ϯ0.01 eV. The comparison of activation energies of the two surface states with the Schottky barrier height 0.66Ϯ0.01 eV suggests that H1 and H2 are deeply related to the Fermi energy pinning levels at the Al 0.24 Ga 0.76 As surface.

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Section: Discussionmentioning

confidence: 99%

“…23,24 Thus, it is worth while to check other possible origins for the surface states observed in this study. First, a positive DLTS signal was observed only near pinchoff biases in a GaAs metal-semiconductor FET ͑MESFET͒, which was attributed to hole traps existing at the interface of grown layer/substrate.…”

Section: Discussionmentioning

confidence: 99%

Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Choi

Lee

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Transition from Positive to Negative Photoconductance in Doped Hybrid Perovskite Semiconductors

Haque

Abdelhady

et al. 2019

Advanced Optical Materials

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Halide perovskites have been known to be photoconductive for more than half a century, and their efficient photocarrier generation gives rise to positive photoconductivity (PPC). In this work, we report the discovery of negative photoconductivity (NPC) in hybrid perovskite CH 3 NH 3 PbBr 3 after Bi doping. Transient photoconductivity measurements reveal a surprising bipolar behavior with a fast positive response followed by exponential negative photocurrent decay, resulting in an equilibrium photocurrent even below the dark level. The NPC effect in Bidoped CH 3 NH 3 PbBr 3 is among the largest ones reported so far for semiconductors. We propose that the transition to negative photoconductance is related to the presence of DX-like centers in Bi-doped halide perovskites, similar to doped III-V and chalcopyrite semiconductors. Such photogenerated DX-like centers in the Bi-doped CH 3 NH 3 PbBr 3 can trap mobile band electrons

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Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb

Ghezzi

Magnanini

Parisini

et al. 2002

Journal of Applied Physics

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The analysis of the amplitude of the deep level transient spectroscopy signal due to DX centers is exploited to determine the EDX occupancy level of the DX center in Te-doped AlxGa1−xSb in the range of low values of x where EDX is resonant with the conduction band. We take advantage of a small but still detectable change in the occupancy factor of the DX level induced by the filling pulse. It is shown that EDX is very close to the L conduction band edge for x⩽0.20. This behavior is different from the one at x⩾0.30 where EDX lies in the forbidden energy gap and exhibits an x dependence similar to the X edge. These results are discussed at the light of different atomic configuration for DX centers at an anion-substitutional impurity.

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Minority carrier capture at DX centers in AlGaSb Schottky diodes

Cited by 4 publications

References 24 publications

Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Transition from Positive to Negative Photoconductance in Doped Hybrid Perovskite Semiconductors

Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb

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