Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Xuan, Yi; Ye, P. D.; Lin, Hengwei; Wilk, G. D.

doi:10.1063/1.2357566

Cited by 23 publications

(14 citation statements)

References 17 publications

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“…Low-resistance ohmic contacts were formed by thermal annealing at 400 • C for 5 min in flowing N 2 in a quartz tube furnace. After ohmic contact, a layer of TiO 2 was grown on the Si substrate by atomic layer deposition (ALD) technique (George et al 1994(George et al , 1996Lu et al 2006;Xuan et al 2006;Shahrjerdi et al 2007;Wu et al 2007;Hoogeland et al 2009) by high-vacuum ALD Savannah S300 system. Immediately after TiO 2 growth on Si wafer, Al (99•999%) with a thickness of 2000 Å was thermally evaporated from the tungsten filament onto the TiO 2 surface through metal shadow masks with circular dots of ∼2 mm diameter.…”

Section: Methodsmentioning

confidence: 99%

“…Here, ε i is the permittivity of insulator layer TiO 2 and ε i = 48ε o (Lu et al 2006;Xuan et al 2006;Shahrjerdi et al 2007;Wu et al 2007;Hoogeland et al 2009) and ε o is the permittivity of free space.…”

Section: Forward and Reverse Bias I-v Characteristicsmentioning

confidence: 99%

“…TiO 2 are fabricated by various techniques such as chemical vapor deposition, electron beam evaporation, the sol-gel method, sputtering, atomic layer deposition (ALD) method, etc. Among them, the ALD technique has been employed to grow ultra-thin and high-k dielectrics on a substrate owing to its advantages over other deposition methods such as excellent thickness uniformity over large substrate areas, low processing temperature, low impurity content and completely precise thickness control (Lu et al 2006;Xuan et al 2006;Shahrjerdi et al 2007;Wu et al 2007;Hoogeland et al 2009).…”

Section: Introductionmentioning

confidence: 99%

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ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

et al. 2014

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Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO 2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using thermionic emission (TE) theory, the main electrical parameters of the Al/TiO 2 /p-Si Schottky diode such as ideality factor (n), zero bias barrier height (φ Bo) and series resistance (R s) were estimated from forward bias I-V plots. At the same time, values of n, φ Bo and R s were obtained from Cheung's method. It was shown that electrical parameters obtained from TE theory and Cheung's method exhibit close agreement with each other. The reverse-bias leakage current mechanism of Al/TiO 2 /p-Si Schottky barrier diodes was investigated. The I-V curves in the reverse direction are taken and interpreted via both Schottky and Poole-Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of diode were investigated at different frequencies (50-500 kHz). The frequency dependence of interface states density was obtained from the Hill-Coleman method and the voltage dependence of interface states density was obtained from the high-low frequency capacitance method.

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Section: Methodsmentioning

confidence: 99%

Section: Forward and Reverse Bias I-v Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

et al. 2014

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“…Electrochemical and Solid-State Letters, 12 ͑8͒ G40-G43 ͑2009͒ G41 surements: ͑i͒ recombination and generation of minority carriers through the bulk midgap levels in the InGaAs depletion layer, 13,14 i.e., true inversion response, or ͑ii͒ response of a high density of interface states located at midgap, i.e., false inversion response. As discussed below, however, the recombination and the generation of minority carriers via midgap levels in the depletion layer is apparently responsible, suggesting a true inversion layer is formed in this case.…”

Section: G41mentioning

confidence: 99%

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

Shin

Cagnon

Long

et al. 2009

Electrochem. Solid-State Lett.

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An unpinned interface between an Al 2 O 3 layer deposited by atomic layer deposition ͑ALD͒ and a chemically treated n-In 0.53 Ga 0.47 As͑001͒ is demonstrated. The starting surface was prepared by wet etching with NH 4 OH͑aq͒ followed by a thermal desorption of residual As at 380°C immediately before ALD. Analysis of temperature-dependent capacitance-voltage measurements suggests that the Fermi level can sweep through the bandgap of In 0.53 Ga 0.47 As, attaining true accumulation and inversion despite the presence of In oxide and In hydroxide at the interface. This is in contrast to the situation for residual As-related interfacial species, which have been reported to pin the Fermi level at oxide/III-V interfaces.Recently, InGaAs has emerged as a candidate for high mobility n-channel layers in metal-oxide-semiconductor field effect transistors ͑MOSFETs͒. Despite rapidly growing interest and extensive ongoing research, 1-3 achieving a high quality interface between a high-k metal-oxide dielectric layer and InGaAs remains a challenging task. One approach to prepare metal-oxide/InGaAs interfaces is removal of the initial native oxide by wet chemical etching before high-k dielectric deposition. 1,4,5 Previously, we employed a surface preparation method, which combines wet chemical etching and thermal desorption of residual As at a moderate temperature, to remove the native oxide from In 0.2 Ga 0.8 As͑100͒ surfaces. These treatments provided a starting surface nearly free of native oxide for subsequent atomic layer deposition ͑ALD͒ of Al 2 O 3 . The ALD-Al 2 O 3 /In 0.2 Ga 0.8 As interface was free of an In-, Ga-, or Asrelated interfacial oxide layer, as indicated by X-ray photoemission spectroscopy ͑XPS͒, and a capacitance-derived equivalent oxide thickness of less than 2 nm was demonstrated for the resulting metal-oxide-semiconductor ͑MOS͒ capacitors. 1 In this work, we demonstrate an unpinned interface between an Al 2 O 3 gate insulator grown by ALD and n-In 0.53 Ga 0.47 As͑001͒ surfaces prepared by wet etching of native oxide with a NH 4 OH͑aq͒ solution followed by a thermal treatment before ALD. A combination of XPS and temperature-dependent capacitance-voltage ͑C-V͒ curves of the resultant MOS capacitors suggests that the interface is unpinned despite the presence of In oxide and hydroxide at the interface after Al 2 O 3 ALD. This is in contrast to As and As oxides at the gate insulator/channel interface, which have been reported to produce defects that pin the Fermi level. 6 The starting surface was a native oxide layer on a 40 nm thick n-type In 0.53 Ga 0.47 As͑100͒ molecular-beam-epitaxy-grown channel on heavily doped n-type InP. The nominal dopant ͑Si͒ concentration in the InGaAs layer was ϳ1 ϫ 10 18 cm −3 . The samples underwent wet etching in a 4 vol % NH 4 OH͑aq͒ solution at room temperature and were immediately transferred to an ALD reactor ͑with a base pressure of ϳ10 −6 Torr͒ for the ALD of Al 2 O 3 . The wet etching step lasted for about 15 min and was followed by rinsing with deionized water and by dr...

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“…Since Al 2 O 3 exhibits the thermodynamic stability against Si and the action of an oxygen diffusion barrier, the Al 2 O 3 with the wide band gap energy, would replay SiO 2 gate dielectric [1][2][3][4] . And a low temperature processing of semiconductor surfaces is intriguing for dimensional scaling of future ULSI semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Formation of Al₂O₃ Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

et al. 2010

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Al 2 O 3 films were grown on Si substrates by microwave generated remote plasma assisted atomic layer deposition technique (PA-ALD). The thickness of the Al 2 O 3 films would be controlled by using the ALD cycles. For the X-ray photoelectron spectroscopy results of Al 2 O 3 film, carbon compounds didn't exist into Al 2 O 3 film. The Au/ Al 2 O 3 / Si/ Au MOS capacitor obtained at 41 ALD cycles had small hysteresis and the interface trap density of 4.5x10 10 cm -2 eV -1 .

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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Cited by 23 publications

References 17 publications

ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

Formation of Al₂O₃ Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Cited by 23 publications

References 17 publications

ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique

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Formation of Al₂O₃ Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique