Minority carrier lifetime and diffusion length in type II superlattice barrier devices

Klipstein, P. C.; Benny, Y.; Gliksman, S.; Glozman, A.; Hojman, E.; Klin, O.; Langof, L.; Lukomsky, Inna; Marderfeld, I.; Nitzani, M.; Snapi, N.; Weiss, Eliezer

doi:10.1016/j.infrared.2018.11.022

Cited by 19 publications

(22 citation statements)

References 11 publications

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“…Although, in Ref. [34] it is mentioned that the intrinsic carrier concentration is almost independent of the SL period, we observed a slight difference between the 14/7 SL and 12/2 SL. This may come from the fact that the method to determine the effective mass from the electronic band structure is different in Ref.…”

Section: Influence Of the Inas/gasb Sl Design On The Band Structure Acontrasting

confidence: 72%

“…This may come from the fact that the method to determine the effective mass from the electronic band structure is different in Ref. [34]. In addition, the ratio of the InAs and GaSb layer thicknesses is ranging from 1.4 to 2.5 whereas in our case the difference of ratio between the 14/7 SL and 12/2 SL is quite large (factor of 3).…”

Section: Influence Of the Inas/gasb Sl Design On The Band Structure Amentioning

confidence: 69%

“…We consider that the diffusion length is not the limiting factor of our device, i.e. it is larger than the absorber thickness of 4 µm [33][34]. Therefore, the only difference between both structures comes from the intrinsic carrier concentration.…”

Section: Influence Of the Inas/gasb Sl Design On The Band Structure Amentioning

confidence: 99%

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A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

Delmas

Liang

Huffaker

2019

Quantum Sensing and Nano Electronics and Photonics XVI

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In this work, the electronic band structure of the InAs/GaSb superlattice (SL) is calculated using a commercial 8-band k⸳p solver and the electrical performance of longwave nBp device structure evaluated with Atlas from Silvaco software. By taking into account an InSb interface layer and the interface matrix (formulated by P.C. Klisptein), the model can predict the measured energy band gap of different InAs/GaSb SLs having different period composition and thickness (7/4, 10/4, 12/4, 14/4 and 14/7 SLs) within an error corresponding to the ± deviation range. The effective mass is then extracted from the electronic band structure calculation and discussed for numerous SL designs. In particular, we compare a 14/7 SL and a 12/2 SL having an energy band gap equal to 0.122 and 0.118 eV at 77K, respectively. The electron-hole wavefunction overlap for the 12/2 SL has been estimated to be ~74%, which is almost twice the value calculated for the 14/7 SL (~40%). This arises from the delocalization of carriers in a thinner SL period also leading to smaller carrier effective masses in the 12/2 SL. The dark-current of a nBp structure has been calculated for both SLs. For the 14/7 SL, the dark-current level has been found to be higher by a factor of over 3 than the Rule07 benchmark, whereas for the 12/2 SL, it is lower by a factor of 0.77, demonstrating that the SL design can be used to improve the device performances.

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Section: Influence Of the Inas/gasb Sl Design On The Band Structure Acontrasting

confidence: 72%

Section: Influence Of the Inas/gasb Sl Design On The Band Structure Amentioning

confidence: 69%

See 1 more Smart Citation

A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

Delmas

Liang

Huffaker

2019

Quantum Sensing and Nano Electronics and Photonics XVI

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“…At a reverse-bias condition where the PN junction severs as a sink, all photo-generated minority carriers (holes) within a lateral diffusion length (L h ) will be collected by the PN junctions. As the nominal size of a pixel is D and the actual size will be D + 2L h , a size-dependent behaviour of the responsivity is expected and can be estimated using [7] R D…”

Section: Experimentmentioning

confidence: 99%

“…InAs/GaSb type-II superlattices (T2SLs) have been demonstrated to be an important IR photodetectors [3], and already been manufactured for practical application [4,5]. The lateral diffusion length of minority carriers in InAs/GaSb T2SLs grown by molecular beam epitaxy (MBE) has been evaluated in nBn-or pBp-type devices, where it is determined to be ∼105 μm in an n-type (n = 1 × 10 16 cm −3 ) mid-wavelength IR (MWIR) material [6] or 5-7 μm in a p-type ( p = 2 × 10 15 cm −3 ) long wavelength IR (LWIR) material [7]. Recently, we have reported highperformance MWIR and LWIR photodetectors based on InAs/GaSb T2SLs grown by metalorganic chemical vapour deposition (MOCVD) [8,9].…”

mentioning

confidence: 99%

Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD

Teng

Hao

et al. 2020

Electron. lett.

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The lateral diffusion length (L h) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply-etched PNn device exhibits a diffusionlimited behaviour at 80 K, with a dark current density as low as 9.1 × 10 −6 A/cm 2 at −0.1 V and a 50% cutoff of 10.1 μm. In shallowetched pixels with a common absorber, both the photo-current and the dark current show a size-dependent behaviour. L h deduced from the two methods are 211 and 251 μm, respectively, which are longer than those in superlattice materials grown by molecular beam epitaxy.

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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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Minority carrier lifetime and diffusion length in type II superlattice barrier devices

Cited by 19 publications

References 11 publications

A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

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