Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence

Giesecke, Johannes; Schubert, Martin C.; Michl, Bernhard; Schindler, Florian; Warta, Wilhelm

doi:10.1016/j.solmat.2010.12.016

Cited by 155 publications

(97 citation statements)

References 33 publications

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“…1a. Lifetime has been measured spatially resolved by means of lifetime-calibrated photoluminescence (PL) measurements [31,32] in-between the different steps and time-dependently during the "LID 1" and "LID 2" treatment. Since a distinct injection-dependent recombination has been observed in the cell experiment, PL images have been recorded at an illumination level of G PL = 1 sun representing an injection level corresponding to opencircuit and G PL = 0.3 suns representing a lower injection levels close to the MPP.…”

Section: Preparation Of Lifetime Samples and Experimental Setupmentioning

confidence: 99%

Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear Side

et al. 2015

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Light-induced degradation (LID) has been shown to significantly affect the performance of multicrystalline silicon (mc-Si) solar cells with aluminium oxide (AlOx) passivated rear side. Within this work, the impact of LID on the conversion efficiency of different silicon solar cell architectures with and without AlOx passivation is investigated. Under conditions representing realistic module operation, significant light-induced degradation of up to = -2.9 % rel in conversion efficiency has been observed for multicrystalline silicon (mc-Si) solar cells with AlOx passivation. This degradation has been found to be higher than the degradation of, both, a mc-Si aluminium back surface field (Al-BSF) solar cell and, remarkably, a Czochralski-grown silicon (Cz-Si) solar cell with AlOx passivation. For a more detailed investigation of the interaction of mc-Si and AlOx passivation during degradation, a photoluminescence-based "effective defect" imaging has been performed on AlOx-passivated mc-Si lifetime samples. The local effective defect lifetime related to recombination due to LID-induced defects is found to vary strongly in the range of eff,defect = 5 to 75 μs and, furthermore, areas with low effective lifetime could be identified as areas with relatively high dislocation density.

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Section: Preparation Of Lifetime Samples and Experimental Setupmentioning

confidence: 99%

Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear Side

et al. 2015

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“…We recently proposed an adequate averaging procedure aiming at a lifetime calibration of a spatially resolved steady-state photoluminescence image via QSSPL, the complete derivation of which can be found in [14]. The spatially resolved intensity j i of pixel i of a photoluminescence image relates to local lifetime t i as…”

Section: Theorymentioning

confidence: 99%

“…In order to be able to perform a spatially resolved lifetime calibration of photoluminescence images of silicon solar cells and metallized cell precursors, both the experimental setup and the data evaluation procedure as proposed in [14] had to undergo several modifications.…”

Section: Experimental Setup-modificationsmentioning

confidence: 99%

“…Its advantages are a virtual independence of assumptions about carrier mobilities and net dopant concentration, a negligible impact of effects related to surface morphology or luminescence reabsorption, the possibility of injection dependent lifetime measurements, and a sensitivity down to the lifetime range of 1 ms [13]. Furthermore, it was recently demonstrated to be an adequate calibration method for spatially resolved photoluminescence images [14].…”

Section: Introductionmentioning

confidence: 99%

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Minority carrier lifetime of silicon solar cells from quasi-steady-state photoluminescence

Giesecke

Michl

Schindler

et al. 2011

Solar Energy Materials and Solar Cells

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“…Imaging techniques based on quasi-steady-state (dc) electroluminescence and photoluminescence (PL) are widely used for qualitative and quantitative characterization of silicon solar cells [1][2][3][4][5][6]. These types of imaging are extremely relevant for an estimation of the efficiency of solar cells using non-contacting methods [7,8].…”

Section: Introductionmentioning

confidence: 99%

Lock-in and Heterodyne Carrierographic Imaging Characterization of Industrial Multicrystalline Silicon Solar Cells

et al. 2012

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A novel non-destructive, non-contact laser-induced near-infrared imaging technique using an InGaAs camera and based on dynamic carrierography (a spectrally gated modulated photoluminescence modality) was used in direct lock-in (LICG) and heterodyne (HDCG) modes to characterize industrial multicrystalline silicon solar cells. The image amplitude depends on the free-photocarrier diffusion-wave density, the spatial resolution is a function of modulation frequency, and the contrast is due to the spatial distribution of important parameters influencing the efficiency of the solar cell, such as base recombination lifetime. High-spatial-resolution and high-frequency carrierographic images have been obtained using a HDCG method. The relationship between the LICG amplitude and the solar cell terminal photovoltage under an external load was investigated. The influence of surface recombination velocities and damage of the solar cell p-n junction was studied. A correlation between the solar cell efficiency and the surface-integrated LICG amplitude from the entire solar cell is presented.

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Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence

Cited by 155 publications

References 33 publications

Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear Side

Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear Side

Minority carrier lifetime of silicon solar cells from quasi-steady-state photoluminescence

Lock-in and Heterodyne Carrierographic Imaging Characterization of Industrial Multicrystalline Silicon Solar Cells

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