Minority carrier lifetime in mercury cadmium telluride

Abstract

This paper reviews the current status of minority carrier lifetime in n-type and p-type (Hg, Cd)Te. This review includes a discussion of the relevant (Hg, Cd)Te recombination mechanisms and measurement techniques. The reported experimentally determined lifetimes were related to (Hg, Cd)Te material iproperties of carrier concentration, Shockley-Read-Hall centres, non-uniformities ,and dislocation densities

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

“…The gathered values of carrier lifetimes in this table and in Fig. 6 excess the values presented by Lopes et al [14] about one order of magnitude and confirm the new model proposed by Krisnamurthy et al [15]. Doping profile study and understanding the electrical properties of single layers enable to control compound HgCdTe heterostructure deposition for infrared photodiode fabrication.…”

Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes

“…Additionally, the nonfundamental Shockley-Read-Hall (SRH) recombination mechanism is associated with trap states (mercury vacancies) and dislocations. 1 Since the 1970s, all these mechanisms have been the subject of extensive experimental and theoretical research. 2 While the influence of SRH mechanisms can be limited by reducing the density of trap states in the technological processes, the radiative and Auger mechanisms represent a fundamental limit on the rate of thermal generation (or recombination) of charge carriers.…”

Determination of Shockley‐Read recombination center parameters in MBE p‐Hg1‐xCdxTe/GaAs via photoconductivity in magnetic field

“…The experimental ratios τ p /τ n were compared with theoretical values calculated from expressions for radiation+Auger-7 +Sockley-Read recombination mechanisms [2]. The parameters E g , C n and C p are used as fitting ones.…”

“…, (3) where N 1 =N c exp(-(E t -E g )/kT) and P 1 =N v exp(-E t /kT) -effective densities of states in conductive and valence band reduced to defects energy level [2]. In approximation of low excitation the expression (3) can be rewritten as following:…”

“…In this case the lifetime of charge carriers depends from such parameters of recombination centres as an energy gap E g , a concentration N t and capture coefficients C n and C p for electrons and holes, respectively [2]. Previously the parameters of recombination centres were determined in narrow-gap MCT with x≈0.2 by DLTS measurements [3] or by comparison of transient and steady-state excess charge carriers lifetimes [4,5].…”