Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

Abstract

We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects.

Majority and Minority Charge Carrier Traps in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

“…The unintentional boron incorporation was recently explained by the presence of boron in the graphite susceptor used for the CVD growth [30][31]. The B and D-centre have been reported in numerous studies and have been assigned to substitutional boron atoms occupying the Si and C-site, respectively [30][31][32][33]. The shallow state, BSi is off-center substitutional boron at Si-site, while for the deep state Bc, boron occupies a perfect substitutional C site [34].…”

Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

“…The objective of this work is to use capacitance transient spectroscopy in the form of deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) [12][13] to investigate and identify the heavy-ion induced electrically active defects, with particular attention to defects created when observing SELC. Commercial 4H-SiC Schottky power diodes irradiated with heavy-ion microbeam have been analysed, comparing measurements before and after the irradiation for devices exposed at different biases.…”

An Overview of Radiation Induced Deep Level Defects in n-type 4H-SiC Studied by Junction Spectroscopy Techniques

“…The isothermal DLTS has proven as a very useful technique for studying the bistable defects in n-type 4H-SiC [6], while MCTS gives information on minority carrier traps. Minority carriers could be optically generated by use of above-bandgap light [7].…”