MIR optical modulator based on silicon-on-calcium fluoride platform with VO2 material

Alrayk, Yassmin K. A.; Younis, B. M.; Deeb, Walid S. El; Hameed, Mohamed Farhat O.

doi:10.1007/s11082-021-03181-7

Cited by 8 publications

(5 citation statements)

References 53 publications

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“…7 The large perturbation of the refractive index upon ultrafast phase transition enables VO 2 to be a potential candidate PCM for optical applications. 8 However, the large hysteresis width of VO 2 leads to optical device unreliability. 9 We previously explored binary selenium−antimony (Sb−Se) material, which is suitable for tunable optical devices thanks to the low optical loss and the high switching ratio between the amorphous and crystalline states.…”

Section: Introductionmentioning

confidence: 99%

“…The well-known vanadium dioxide (VO 2 ) is a volatile PCM with structural transition linking to the change in its electrical and optical properties . The large perturbation of the refractive index upon ultrafast phase transition enables VO 2 to be a potential candidate PCM for optical applications . However, the large hysteresis width of VO 2 leads to optical device unreliability .…”

Section: Introductionmentioning

confidence: 99%

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Resonant Bonding Dependence of the Phase Change Characteristics of a VO₂-Sb₂Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Zhang

Guo

et al. 2023

Crystal Growth & Design

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Phase change material (PCM) has gained great attraction for being widely used in tunable photonic devices due to its nonvolatility, excellent scalability, high speed, and tunable properties. However, the unclear source of the phase-change characteristics limits PCM for true device-level integrated circuits with high configuration and multifunctional attributes, especially in the mid-infrared (MIR) region. In this paper, the inherent dependences of phase-change characteristics on both the microstructure and bonding environments of the (VO2) x (Sb2Se)100–x film are disclosed for low-loss and nonvolatile tunable photonic devices. (VO2) x (Sb2Se)100–x films possess a tendency that the crystallization temperature, 10 year data-retention temperature, and optical band gap of (VO2) x (Sb2Se)100–x films increase with the increase of VO2 content. The improvement in thermal stability of (VO2) x (Sb2Se)100–x is ascribed to the complex bonding environment consisting of Se–V and Sb–V bonds with the large bonding enthalpy, which disturbs the crystallization. The symbolic value for the contribution of resonant bonding ζ is derived by the real part ε1 and imaginary part ε2 of dielectric functions with a wavelength ranging from 1.7 to 25 μm. With increasing VO2 content, a large structural distortion in the VO2-rich phase leads to a reduction in the level of resonant bonding, which accounts for a decrease in the optical refractive index contrast. These results shed light on intrinsic material science and engineering to the ongoing search for other phase-change materials for tunable photonic devices in the MIR region.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Resonant Bonding Dependence of the Phase Change Characteristics of a VO₂-Sb₂Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Zhang

Guo

et al. 2023

Crystal Growth & Design

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“…When the temperature is above their phase transition temperature t s , GST/IST switches from an amorphous to crystalline state, accompanied by significant changes in the complex refractive index. Meanwhile, most current thermo-optic modulators are two-phase-type modulated by a single PCM [32][33][34][35][36][37][38][39], such as hybrid and orthogonal junction modulators with VO 2 , plasmonic modulators with GST and reflection modulators with Sb 2 S 3 .…”

Section: Introductionmentioning

confidence: 99%

Self-Adaptive Multistage Infrared Radiative Thermo-Optic Modulators Based on Phase-Change Materials

Zhu,

Xie,

Zhang

et al. 2023

Photonics

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Phase-Change Materials (PCMs) are widely applied in dynamic optical modulation due to the dramatic changes in their complex refractive index caused by temperature variation. As the functionality varies, the application of a single PCM cannot meet the compact, efficient and broadband needs of optical modulators. In this work, we combine vanadium dioxide (VO2) and a chalcogenide (Ge2Sb2Te5 (GST) or In3SbTe2 (IST)) to obtain a VO2–GST/IST multiple-stack film that is optimized by a genetic algorithm. This film has a wide spectrum and high modulation properties with three self-switchable modes varied by temperature, including transmission, absorption and reflection. The optimal results are an average normal transmittance, absorbance, and reflectance of 0.76, 0.91, 0.86 in 3–5 μm and 0.72, 0.90, 0.90 in 8–14 μm under different temperature ranges. The film enhances the transmission and absorption properties due to the formation of anti-reflective coating and Fabry–Perot resonance. Compared with GST, the film maintains high reflectance due to the metal-like interface reflection of crystalline IST, which exhibits metallic properties. For different polarization states, the film demonstrates great directional insensitivity when the incidence angles vary from 0° to 60°. The designed self-adaptive multistage infrared radiative thermo-optic modulator has promising implications for optical fuse, fiber-optic communication and energy storage fields.

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Section: Introductionmentioning

confidence: 99%

“…Vanadium dioxide (VO 2 ) shows reversible metal (R phase) to insulator (M1 phase) transition (MIT) at a critical temperature have been currently researched and applied in the field of infrared sensitivity, optical storage, optical switches, and smart windows. [1][2][3][4][5][6] Among them, smart windows have been a research hotspot for a long time. However, to satisfy the performance requirements of VO 2 -based smart windows, the primary request is to reduce the phase transition temperature (T c ) of VO 2 films to room temperature (25 ~35 °C).…”

Section: Introductionmentioning

confidence: 99%

The valence conversion mechanism for Mo‐doped VO₂ films with enhanced thermochromic properties

Pei

Han

et al. 2022

Zeitschrift anorg allge chemie

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Reducing the phase transition temperature (Tc) of VO2 films to achieve the application in the field of Smart Home is still a challenge. Thus, in the work, the ultra‐thin VO2 films with different Mo doping amounts were successfully prepared by an economic sol‐gel method and atmosphere annealing, aiming to further investigate the mechanism of the decrease of Tc. The results show that the VO2 films with 3 at % Mo doping possess the Tc of 29.5 °C. Notedly, in the as‐prepared films, the maximum transmittance in the visible region (Tvis) is 46.3 % and the solar direct transmittance (Tsol) is 45.8 %. According to the XPS spectra, it is confirmed that the Mo doping prominently induces the valence change of V ions from +4 to +3, inhibiting the strain in the phase transition process of VO2 films, and leading to the decrease of Tc. Our work will provide a feasible solution for reducing the Tc of the ultra‐thin VO2 films.

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MIR optical modulator based on silicon-on-calcium fluoride platform with VO2 material

Cited by 8 publications

References 53 publications

Resonant Bonding Dependence of the Phase Change Characteristics of a VO₂-Sb₂Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Resonant Bonding Dependence of the Phase Change Characteristics of a VO₂-Sb₂Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Self-Adaptive Multistage Infrared Radiative Thermo-Optic Modulators Based on Phase-Change Materials

The valence conversion mechanism for Mo‐doped VO₂ films with enhanced thermochromic properties

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MIR optical modulator based on silicon-on-calcium fluoride platform with VO2 material

Cited by 8 publications

References 53 publications

Resonant Bonding Dependence of the Phase Change Characteristics of a VO2-Sb2Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Resonant Bonding Dependence of the Phase Change Characteristics of a VO2-Sb2Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Self-Adaptive Multistage Infrared Radiative Thermo-Optic Modulators Based on Phase-Change Materials

The valence conversion mechanism for Mo‐doped VO2 films with enhanced thermochromic properties

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Product

Resources

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Resonant Bonding Dependence of the Phase Change Characteristics of a VO₂-Sb₂Se Film for Tunable Photonic Devices in the Mid-Infrared Region

Resonant Bonding Dependence of the Phase Change Characteristics of a VO₂-Sb₂Se Film for Tunable Photonic Devices in the Mid-Infrared Region

The valence conversion mechanism for Mo‐doped VO₂ films with enhanced thermochromic properties