MIS-Field Effect sensors for low concentration of H2S for environmental monitoring

Samotaev

Nikiforova

et al. 2019

Sensors

We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip’s thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation.

Section: Introductionmentioning

confidence: 99%

Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta2O5-SiO2-Si Structure During Long-Term Operation

Samotaev

Nikiforova

et al. 2019

Sensors

“…The gas sensors based on the metal-insulator-semiconductor devices (MIS-capacitors and field-effect transistors called as MISFETs) have been studied by many investigators (e.g., [1][2][3][4][5][6][7][8][9][10]). A great contribution to the developments of gas-sensitive MIS devices has been made by the researchers at Linköping University [5].…”

Section: Introductionmentioning

confidence: 99%

“…MIS sensors with different gates' material (palladium, platinum and iridium), with dielectric films SiO2, Si3N4-SiO2, TiO2-SiO2, Ta2O5-SiO2 have been investigated. Semiconductors Si, GaAs [3] and SiC [7] were used in MIS gas sensors to detect the low concentrations of gases H2 [2][3][4], NH3 [5], H2S [6] and CO [7]. The studies have shown that performances characteristics of MISFET-based hydrogen sensors depend on technological parameters [2], electrical modes [8], chip temperature [10] and external factors (other gases, irradiation [9]).…”

Section: Introductionmentioning

confidence: 99%

Performance Degradations of MISFET-Based Hydrogen Sensors with Pd-Ta2O5-SiO2-Si Structure at Long-Time Operation

Nikiforova²,

Kovalenko³

2018

Eurosensors 2018

There are presented the generalized results of studies of performance degradation of hydrogen sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si. It was shown how responses' parameters change during long-term tests of sensors under repeated hydrogen impacts. There were found two stages of time-dependence response' instability, the degradation degree of which depends on operating conditions, hydrogen concentrations and time. To interpret results there were proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based devices for long-time operation.

“…The hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor (MISFETs) have been studied by many investigators [1][2][3][4][5][6][7]. The studies have shown that the conversion characteristics (the sensor output signals V as function of the hydrogen concentration C) depend on MISFET's technological parameters [3,5] chip temperature [6] and external factors (other gases, irradiation) [4,7].…”

Section: Introductionmentioning

confidence: 99%

“…The studies have shown that the conversion characteristics (the sensor output signals V as function of the hydrogen concentration C) depend on MISFET's technological parameters [3,5] chip temperature [6] and external factors (other gases, irradiation) [4,7].…”

Section: Introductionmentioning

confidence: 99%

Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

Kovalenko²,

Nikiforova

2017

Abstract:The influence of the circuit's electric modes on the radiation sensitivity of hydrogen sensors based on the metal-insulator-semiconductor field-effect transistor with structure Pd-Ta2O5-SiO2-Si (MISFET) was investigated. There were measured the hydrogen responses of output voltages V of the MISFET-based circuits at different gate voltages before and after the electron irradiations. The voltages V as functions of hydrogen concentration C were determined for different ionizing doses D. Models of influence of the electric modes on the radiation sensitivity of sensors were based on experimental dependencies of V(C, D). The recommendations for the optimal choice of MISFET-based circuit's electric modes were formulated.