2010
DOI: 10.1016/j.actamat.2009.09.060
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Misfit strain–film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

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Cited by 34 publications
(14 citation statements)
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“…Therefore, some modifications should be made to the coefficients of Eqs. (2) as follows 28,29 : For x 1 direction:…”
Section: Phase Field Methods Of Ferroelectric Thin Filmsmentioning
confidence: 99%
“…Therefore, some modifications should be made to the coefficients of Eqs. (2) as follows 28,29 : For x 1 direction:…”
Section: Phase Field Methods Of Ferroelectric Thin Filmsmentioning
confidence: 99%
“…7. In our calculations, we have used the same parameters as Qiu et al 45 . The LGD results are in agreement with our first-principles calculations, reproducing a F E x ground state under compressive stress and a F E z groundstate under tensile stress.…”
Section: Uniaxial Stressmentioning
confidence: 99%
“…In addition, at 150-nm thickness, there was a compressive strain relaxation caused by the formation of dislocation, resulting in the increase of a-domains in the thin film [38]. Moreover, Qiu et al [41,42] carried out studies on possible relaxation mechanisms as a function of film thickness in PTO and PZT thin films. Thus, the simulation result obtained for a thin film subjected to a tensile epitaxial strain, e epi = 0.4 %, is chosen to compare with the corresponding result from Ref.…”
Section: Domain-switching Dynamicsmentioning
confidence: 97%