MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications

Spetz, Anita Lloyd; Unéus, Lars; Svenningstorp, Henrik; Wingbrant, H.; Harris, Chris I.; Salomonsson, Per; Tengström, Paulina; Mårtensson, Per; Ljung, Per; Mattsson, M.; Visser, J.H.; Ejakov, S.G.; Kubinski, David J.; Ekedahl, Lars-Gunnar; Lundström, Ingemar; Savage, Susan

doi:10.4028/www.scientific.net/msf.389-393.1415

Cited by 4 publications

(2 citation statements)

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“…Here the wide operating temperature of the silicon carbide devices offers a significant advantage over the traditional ceramic based devices as they can be used to measure the behaviour immediately after ignition of the engine [41], where some 95-98% of the pollution from a test driving cycle are generated. These cold start measurements are not possible using ceramic sensors, which are brittle and cannot tolerate the thermal shock generated by the water droplets in the cold exhaust system [71].…”

Section: Combustion Controlmentioning

confidence: 99%

SiC sensors: a review

Wright¹,

Horsfall²

2007

J. Phys. D: Appl. Phys.

249

112

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Silicon carbide has attracted considerable attention in recent years as a potential material for sensor devices. This paper reviews the current status of SiC technology for a wide range of sensor applications. It is shown that SiC MEMs devices are well-established with operational devices demonstrated at high temperatures (up to 500 °C) for the sensing of motion, acceleration and gas flow. SiC sensors devices using electrical properties as the sensing mechanism have also been demonstrated principally for gas composition and radiation detection and have wide potential use in scientific, medical and combustion monitoring applications.

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Section: Combustion Controlmentioning

confidence: 99%

SiC sensors: a review

Wright¹,

Horsfall²

2007

J. Phys. D: Appl. Phys.

249

112

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“…Silicon Carbide and Related Materials -2002 The MISiC sensor operated at 300°C has demonstrated very promising results [7]. The sensor response to NH 3 shows an optimum at a temperature between 200 and 300ºC, as can be seen in Fig.…”

mentioning

confidence: 96%

MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases

Wingbrant

Unéus

Andersson

et al. 2003

MSF

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A chemical gas sensor based on a silicon carbide field effect transistor with a catalytic gate metal has been under development for a number of years. The choice of silicon carbide as the semiconductor material allows the sensor to operate at high temperatures, for more than 6 months in flue gases at 300°C and for at least three days at 700°C. The chemical inertness of silicon carbide and a buried gate design makes it a suitable sensor technology for applications in corrosive environments such as exhaust gases and flue gases from boilers. The selectivity of the sensor devices is established through the choice of type and structure of the gate metal as well as the operation temperature. In this way NH 3 sensors with low cross sensitivity to NO x have been demonstrated as potential sensors for control of selective catalytic reduction (SCR) of NO x by urea injection into diesel exhausts. Here we show that sensors with a porous platinum or iridium gate show different temperature ranges for NH 3 detection. The hardness of the silicon carbide makes it for example more resistant to water splash at cold start of a petrol engine than existing technologies, and a sensor which can control the air to fuel ratio, before the exhaust gases are heated, has been demonstrated. Silicon carbide sensors are also tested in flue gases from boilers. Efficient regulation of the combustion in a boiler will decrease fuel consumption and reduce emissions.

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Decoupling of silicon carbide optical sensor response for temperature and pressure measurements

Chakravarty

Quick

Kar³

2007

Journal of Applied Physics

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Articles you may be interested inDesign optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity Rev. Sci. Instrum. 85, 015001 (2014); 10.1063/1.4856455 Development of a simultaneous Hugoniot and temperature measurement for preheated-metal shock experiments: Melting temperatures of Ta at pressures of 100 GPa Rev. Sci. Instrum. 83, 053902 (2012); 10.1063/1.4716459High-pressure and high-temperature x-ray diffraction cell for combined pressure, composition, and temperature measurements of hydrides Rev. Sci. Instrum. 82, 065108 (2011); 10.1063/1.3600668Erratum: "Decoupling of silicon carbide optical sensor response for temperature and pressure measurements" [J.Single crystal silicon carbide is a chemically inert transparent material with superior oxidation-resistant properties at elevated temperatures compared to black polycrystalline silicon carbide substrates. These improved properties make crystalline silicon carbide a good optical sensor material for harsh environments such as combustion chambers and turbine systems. Interferometric optical sensors are orders of magnitude more sensitive than electrical sensors and are proposed for these applications. Silicon carbide itself behaves as a Fabry-Pérot etalon eliminating the need for an external interferometer for any measurement using this silicon carbide as a sensor. The principle of the optical sensor in this study is the temperature-and pressure-dependent refractive index of silicon carbide, which can be used to determine the temperatures and pressures of gases that are in contact with silicon carbide. Interference patterns produced by a silicon carbide ͑4H-SiC͒ wafer due to multiple reflections of a helium-neon laser beam of wavelength of 632.8 nm have been obtained at temperatures up to 500°C and pressures up to 600 psi. The pattern changes for the same gas at different temperatures and pressures and for different gases at the same temperature and pressure. The refractive index at the wafer-gas interface is calculated from the interference pattern and the refractive index gradients with respect to temperature and pressure, respectively, are also determined. Decoupling temperature and pressure using these gradients and the measured reflectivity data are discussed in this paper.

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MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications

Cited by 4 publications

References 0 publications

SiC sensors: a review

SiC sensors: a review

MISiCFET Chemical Sensors for Applications in Exhaust Gases and Flue Gases

Decoupling of silicon carbide optical sensor response for temperature and pressure measurements

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