Mismatch in diffusion resistors caused by photolithography

Hausser, S.; Majoni, Stefan; Schligtenhorst, H.; Kolwe, G.

doi:10.1109/tsm.2003.811584

Cited by 5 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the simulation and mismatch data of foundry, ∆R1/R1 < 1% and ∆R2/R2 < 1% can be easily achieved once the width of resistor is greater than 2µm [7]. The size of R2 is designed as W=4µm, L=66µm, and the resistance is 1015 ohm.…”

Section: A Generation Circuit Of Two Reference Currentsmentioning

confidence: 99%

A novel 12-bit current-steering DAC with two reference currents

Chou

Chen

Chu

et al. 2015

2015 IEEE International Symposium on Circuits and Systems (ISCAS)

View full text Add to dashboard Cite

This paper proposes a new architecture of 12-bit current-steering digital-to-analog converter (DAC) with novel biasing scheme. In the proposed DAC, two 6-bit binary-weighted current source arrays are designed with two reference currents. The technique allows significant area savings without impairing static accuracy. The paper also presents a method to generate dual reference currents, whose design is compact and consumes low static power. The active area of the 12-bit DAC is 0.36mm 2 approximately. This chip was fabricated by a standard 0.18μm CMOS technology, and consumes 38mW at 180MS/s update rate with 1.8V supply voltage.

show abstract

Section: A Generation Circuit Of Two Reference Currentsmentioning

confidence: 99%

A novel 12-bit current-steering DAC with two reference currents

Chou

Chen

Chu

et al. 2015

2015 IEEE International Symposium on Circuits and Systems (ISCAS)

View full text Add to dashboard Cite

show abstract

“…The influence of the development conditions has been considered. 1,2 Recently, photoresist development has become increasingly important with the acceleration of the reduction of design rules and the enlargement of wafer size. Puddle development is generally used in the lithography process for semiconductor devices, because it is superior to dip or spray development in terms of contamination and CD uniformity.…”

mentioning

confidence: 99%

Behavior of Reaction Products during Puddle Development in Fabrication of Ultralarge-Scale Integrations

Etô

Ito

Homma

2007

J. Electrochem. Soc.

View full text Add to dashboard Cite

The behavior of reaction products during puddle development was investigated in ultralarge-scale integration ͑ULSI͒ lithography. The concentration of reaction products originating from novolak photoresist was optically measured. Reaction products during puddle development migrated with time and gathered into cell-like structures. After 5 min from the developer puddle formation, the dissolution rate of photoresist at the cellular structures was about 10% lower than that in other areas. We examined two modified methods of puddle development in order to control the gathering phenomenon of reaction products: one is a method of agitating the reaction product by rocking the wafer, and the other is a method of heating the upper side of the developer solution.The distributions of the dissolution rate ͑3͒ for the former and latter methods were 5.9 and 5.3 nm/min, respectively. Compared with the distribution of the dissolution rate of 9.9 nm/min for conventional puddle development, both modified methods can improve the distribution of the dissolution rate. The migration of reaction products was large when the wafer temperature was high, and the Marangoni number was consistent with the critical value. Therefore, the cellular structures seem to be caused by Marangoni convection.

show abstract

“…(v) Photolithographic effects -Optical interference occurs when light passing through slits due to regular structure of the integrated circuit or 130 narrow features during photolithography. Sidewall reflection also contributes to mismatch issue[75]. (vi) Diffusion interaction -Diffusion interaction between the contact region and the resistor may cause the resistance to vary systematically[76].…”

mentioning

confidence: 99%

Design of constraint-aware readout circuits for bridge sensor applications

Koay¹

View full text Add to dashboard Cite

show abstract

Mismatch in diffusion resistors caused by photolithography

Cited by 5 publications

References 10 publications

A novel 12-bit current-steering DAC with two reference currents

A novel 12-bit current-steering DAC with two reference currents

Behavior of Reaction Products during Puddle Development in Fabrication of Ultralarge-Scale Integrations

Design of constraint-aware readout circuits for bridge sensor applications

Contact Info

Product

Resources

About