Mismatch sources in LDMOS devices

Abstract

Abstract-This paper discusses the influence of different sources of DC parametric mismatch in an LDMOS. By comparing measurements and statistical simulations the impact on mismatch of the most important fluctuation causes is qualitatively evaluated. We demonstrate that, whereas the shape of the doping profile in the channel has little effect, both interface states and series resistances play a major role in the mismatch. This work forms a crucial first step towards a better understanding of the random fluctuation mechanisms present in LDMOS devices used in MMICs.

Interpretation of MOS transistor mismatch signature through statistical device simulations

“…Furthermore, a third source, especially important when the device operates with elevated currents is discussed in this thesis: the Random Series Resistance fluctuations (RSR). In fact, it can mimic either an incidental metalization asymmetry or a fluctuating probe-to-pad contact resistance [44].…”