2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) 2021
DOI: 10.1109/imfedk53601.2021.9637625
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Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs

Tomohiro Motoyama
1
,
Zenji Yatabe
2
,
Y. Nakamura
3
et al.
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