2019
DOI: 10.1016/j.matlet.2019.05.086
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Mitigating graphene etching on SiO2 during fluorination by XeF2

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Cited by 3 publications
(2 citation statements)
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“…[ 11 , 12 , 13 , 14 , 15 , 16 ]. It is also used for the preparation of fluorographenes [ 17 , 18 , 19 ]. Its applicability for low-temperature insertion of fluorine into oxides systems has been demonstrated with the purpose of modification of magnetic and electronic properties, in particular superconductivity [ 20 ].…”
Section: Xenonmentioning
confidence: 99%
“…[ 11 , 12 , 13 , 14 , 15 , 16 ]. It is also used for the preparation of fluorographenes [ 17 , 18 , 19 ]. Its applicability for low-temperature insertion of fluorine into oxides systems has been demonstrated with the purpose of modification of magnetic and electronic properties, in particular superconductivity [ 20 ].…”
Section: Xenonmentioning
confidence: 99%
“…Along similar veins, the methods for synthesizing fluorinated graphene, which has been cited in a few reports, are generally categorized into two groups: (I) Exfoliation methods that include thermal exfoliation [7,8], modified Hummer's exfoliation [9], and sonochemical exfoliation [10], all of which employ the commercially available graphite fluoride (GrF) powders along with severe reaction conditions, that could inevitably destroy a portion of C-F bonds in the fluorinated graphene [11]. (II) Direct graphene fluorination method which has been achieved through utilizing a variety of reactions such as fluorination gas [12,13], plasma fluorination [14], photochemical/electrochemical synthesis [15], and hydrothermal fluorination [16][17][18][19][20], all of which require high thermal treatment temperature and yield a low F content [21]. Therefore, the progress of a safe, secure, low-cost, and effective synthesis route of FG with adaptive F/C atomic ratio is of high demand.…”
Section: Introductionmentioning
confidence: 99%