Mitigation of challenges in automotive power module packaging by dual sided cooling

Wang, Yangang; Li, Yun; Wu, Yibo; Dai, Xiaoping; Ma, Yaqing; Mumby-Croft, Paul; Booth, J.A.; Packwood, Matthew; Jones, Steve; Liu, Guoyou

doi:10.1109/epe.2016.7695564

Cited by 12 publications

(8 citation statements)

References 6 publications

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“…8 shows a schematic of spacer-based sandwich structure for power module. Cu spacers with different thicknesses were used to accommodate height differences between IGBT and diode in a power module [26], [27]. SAC305 solder sheet was selected as a dieattach material.…”

Section: ) Spacer-based Sandwichmentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum wires. In this article, low parasitic inductance and high-efficient cooling interconnection techniques for Si power modules, which are the foundation of packaging methods of SiC ones, are reviewed first. Then, attempts on developing packaging techniques for SiC power modules are thoroughly overviewed. Finally, scientific challenges in the packaging of SiC power module are summarized.

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Section: ) Spacer-based Sandwichmentioning

confidence: 99%

Review of Packaging Schemes for Power Module

Hou

Wang²,

Cao

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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“…In terms of the thermal resistance reduction, various methods are developed to enhance the thermal properties of the packaging materials and to improve the heat conduction from the dies to the cooling interfaces. In the automotive applications, the dual sided cooled (DSC) technology is considered as the most promising candidate due to the advantages in electrical, thermal, mechanical performance and reliability [33][34][35]. DSC module is believed to have superior electrical and thermal performance, as well as the advantages in volume, weight, and cost.…”

Section: Solutions To Lower Thermal Resistancementioning

confidence: 99%

“…Fig. 13 shows a prototype of a DSC automotive power module [34]. The planar interconnection without conventional bond wires on silicon dies is essential to allow power dissipating though double‐side of the chips.…”

Section: Advances In Automotive Semiconductor Packagingmentioning

confidence: 99%

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Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

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This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

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“…Consequently, an extensive research and development regarding key technologies that constitute the power converter (figure 2, 2 ) should be conducted, i.e. advanced thermal management systems [22][23][24], improved DC-link components and designs [25,26], power semiconductor technology [27][28][29][30], optimized layouts and packaging [31][32][33] and alternative power conversion topologies [34][35][36][37], among others. Thus, it becomes clear that the research topics in this field are wide.…”

Section: Introductionmentioning

confidence: 99%