Mitochondrial Genome Recombination in Somatic Hybrids of Solanum Commersonii and S. Tuberosum

Abstract

Interspecific somatic hybridization has been performed in potato breeding experiments to increase plant resistance against biotic and abiotic stress conditions. We analyzed the mitochondrial and plastid genomes and 45S nuclear ribosomal DNA (45S rDNA) for the cultivated potato (S. tuberosum, St), wild potato (S. commersonii, Sc), and their somatic hybrid (StSc). Complex genome components and structure, such as the hybrid form of 45S rDNA in StSc, unique plastome in Sc, and recombinant mitogenome were identified. However, the mitogenome exhibited dynamic multipartite structures in both species as well as in the somatic hybrid. In St, the mitogenome is 756,058 bp and is composed of five subgenomes ranging from 297,014 to 49,171 bp in St. In Sc, it is 552,103 bp long and is composed of two sub-genomes of 338,427 and 213,676 bp length. StSc has 447,645 bp long mitogenome with two subgenomes of length 398,439 and 49,206 bp. The mitogenome structure exhibited dynamic recombination mediated by tandem repeats; however, it contained highly conserved genes in the three species. Among the 35 protein-coding genes of the StSc mitogenome, 21 were identical for all the three species, and 12 and 2 were unique in Sc and St, respectively. The recombinant mitogenome might be derived from homologous recombination between both species during somatic hybrid development.

A Review of Artificial Spiking Neuron Devices for Neural Processing and Sensing

“…One of the most promising candidates is the two‐terminal memristor device, which uses RRAM or conductive‐bridging random‐access memory, enabling a high‐packing density and low power consumption with a compact crossbar array. [ 10–13 ] Phase‐change random‐access memory and MRAM have also been utilized as two‐terminal synaptic devices because they have the advantage of relatively mature manufacturing compared to RRAM. [ 14,15 ] Otherwise, charge‐trap flash memory is a three‐terminal device that already has been commercialized over a few decades, meaning that instant large‐scale manufacturing is possible with CMOS technology.…”

“…Examples include resistive random‐access memory (RRAM), phase‐change random‐access memory, magnetic random‐access memory (MRAM), and flash memory, among others. [ 10–16 ]…”

Factors Determining the Resistive Switching Behavior of Transparent InGaZnO‐Based Memristors

“…[ 7,54,55 ] This is partly convinced by the relatively small increase in the memory window because the metallic filament in the ECM theory is known to yield a larger on/off ratio than the oxygen filament in VCM. [ 56 ] To gain deeper insight into the nature of the conducting filaments in the Cu TE device, the temperature coefficients ( α ) of Cu TE and Ag TE devices were investigated using the following equation and the results of linearly fitted R ( T )/ R 0 over temperature are shown in Figure S4, Supporting Informationwhere R(T) is the resistance at temperature T , R 0 is the resistance at temperature T 0 , and α is the temperature coefficient of the resistance that represents a material's variability of resistance with respect to the initial resistance due to the change in temperature. [ 52 ] As all IGZO layers used in this study were annealed at 400 °C in air for 2 h and the temperature for the coefficient investigation was limited to 386 K, it is assumed that no permanent changes in IGZO resistance were made during the temperature‐dependent measurements.…”

Edible Coating from Banana Peel Waste to Extend Tomato Shelf Life

“…Kandungan pada kulit pisang dapat memberikan banyak pengaruh positif seperti sebagai tambahan diet pada percobaan tikus dengan kegagalan fungsi hati (Mosa & Khalil, 2015). Kandungan limbah buah ini juga dapat digunakan sebagai penghilang warna dan logam berat (Yu et al, 2018), penghilang ion radioaktif stronsium (Choi et al, 2021), dan mangan dalam air (Ali, 2017).…”