Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

“…TEAl was chosen as the Al source in order to maintain an all-ethyl-alkyl source chemistry, thereby eliminating parasitic mixed-alkyl interactions. 15 The low vapor pressure of TEAl required the source line to be heated to a temperature of $150°C to prevent condensation. The flow of NH 3 was regulated by a mass flow controller, while TEGa and TEAl were controlled by regulating a pressure behind a 660-lm leak orifice 16 feeding directly to the growth surface.…”

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

“…Ammonia (NH 3 ), triethylgallium (TEGa), and triethylaluminum (TEAl) were used as the precursors introduced without carrier gases. TEAl was chosen as the Al source in order to maintain an all-ethyl-alkyl source chemistry, thereby eliminating parasitic mixed-alkyl interactions [8]. The low vapor pressure of TEAl required the source line to be heated to a temperature of 150 1C in order to prevent condensation.…”

Growth and characterization of AlxGa1−xN via NH3-based metal-organic molecular beam epitaxy

“…Ammonia (NH 3 ), triethylgallium (TEGa) and triethylaluminum (TEAl) were used as the precursors, without the use of carrier gases. Triethylaluminum was chosen as the Al source in order to maintain an all-ethyl-alkyl source chemistry [11]. The low vapor pressure of TEAl required the source line to be heated to a temperature of 150 1C to prevent condensation.…”