“…Nevertheless, these IR-NLO materials still suffer from some disadvantages (e.g., strong two-photon absorption, non-phase-matching (NPM) feature, and low laser-induced damage thresholds (LIDT)), thereby hindering their further development. In principle, for a practical and available IR-NLO material, several key conditions such as noncentrosymmetric (NCS) space group (SG), suitable birefringence (Δ n ) for phase matching (PM), large second harmonic generation response ( d ij ), high LIDT, wide transparent window, and good physicochemical properties should be achieved. − For the above-mentioned prerequisites, a large number of IR-NLO candidates have been discovered and prepared through various strategies in the past few decades. − Among them, metal chalcogenides with diamond-like (DL) structure are supposed to be the most promising IR-NLO candidates, owing to the following advantages: (i) rich asymmetric building motifs (ABMs) constructed by covalent M–Q (Q = chalcogen) bonds, including [M I Q 4 ] (M I = Li, Cu, and Ag), [M II Q 4 ] (M II = Mg, Mn, Zn, Cd, and Hg), [M III Q 4 ] (M III = B, Al, Ga, and In), [M IV Q 4 ] (M IV = Si, Ge, and Sn), and [M V Q 4 ] (M V = P, As, and Sb); (ii) intrinsic NCS crystal structures derived from the alignment of the aforementioned ABMs; (iii) wide optical transparency windows in the IR range activated by the covalent M–Q bonds; and (iv) strong polarizabilities to realize the coexistence of a large d ij and suitable Δ n . On the basis of the valence electron concentration (VEC) rule, these materials can generally be divided into two types: normal and defect DL metal chalcogenides.…”