Mixed Organotin(IV) Chalcogenides: From Molecules to Sn‐S‐Se Semiconducting Thin Films Deposited by Spin‐Coating

Bouška, Marek; Strizik, Lukas; Dostál, Libor; Růžička, Aleš; Lyčka, Antonı́n; Beneš, Ludvı́k; Vlček, M.; Přikryl, Jan; Knotek, Petr; Wágner, T.; Jambor, Roman

doi:10.1002/chem.201203573

Cited by 26 publications

(13 citation statements)

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“…Me 3 SiCl upon the addition of further equivalents of A and/ or (Me 3 Si) 2 S, including and passing through the formation of compound 1. The total energy decreases stepwise, by approximately 17 kJ mol À1 per newly created bond ( Figure 5 and the Supporting Information, Table S2).…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3] The dynamic behavior of chalcogenidotetrelate clusters and complexes in solution is an intrinsic feature of the chemistry of these compounds and affords remarkable topologies and bonding situations. [4] The understanding of these processes represent the basis for their directed synthesis and, hence, the design of new tailor-made compounds of this class.…”

Section: Introductionmentioning

confidence: 99%

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Functionalized Organotin‐Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization

Eußner

Barth

Leusmann

et al. 2013

Chemistry A European J

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The synthesis of new functionalized organotin-chalcogenide complexes was achieved by systematic optimization of the reaction conditions. The structures of compounds [(R(1, 2) Sn)3 S4 Cl] (1, 2), [((R(2) Sn)2 SnS4 )2 (μ-S)2 ] (3), [(R(1, 2) Sn)3 Se4 ][SnCl3 ] (4, 5), and [Li(thf)n ][(R(3) Sn)(HR(3) Sn)2 Se4 Cl] (6), in which R(1) =CMe2 CH2 C(O)Me, R(2) =CMe2 CH2 C(NNH2 )Me, and R(3) =CH2 CH2 COO, are based on defect heterocubane scaffolds, as shown by X-ray diffraction, (119) Sn NMR spectroscopy, and ESI mass spectrometry analyses. Compounds 4, 5, and 6 constitute the first examples of defect heterocubane-type metal-chalcogenide complexes that are comprised of selenide ligands. Comprehensive DFT calculations prompted us to search for the formal intermediates [(R(1) SnCl2 )2 (μ-S)] (7) and [(R(1) SnCl)2 (μ-S)2 ] (8), which were isolated and helped to understand the stepwise formation of compounds 1-6.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Functionalized Organotin‐Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization

Eußner

Barth

Leusmann

et al. 2013

Chemistry A European J

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“…This work documents the synthesis and characterization of a series of tin(IV) bis‐guanidinate complexes 2–4 and 6–9 , and initial investigations into their utility as precursors for the solvothermal synthesis of tin(II) chalcogenide nanocrystals. However, while it should be noted that related complexes have being used in the deposition of thin films of tin(VI) chalcogenides by spin coating, the work reported here, to the best of our knowledge, represents the first reported use of Sn=E containing systems as single source precursors for SnS, SnSe and SnTe nanoparticle synthesis, with control over the oxidation state of the products. The synthesis for the bis‐phenyl chalcogenide complexes 2–4 involves the straight forward reaction of the easily prepared stannylene 1 , with commercially available diphenyl dichalcogenides Ph 2 E 2 (E = S, Se and Te).…”

Section: Discussionmentioning

confidence: 96%

Oxidative Addition to Sn^II Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystals

Ahmet

Johnson

2018

Eur J Inorg Chem

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SnS, SnSe and SnTe are potentially important semiconductor materials. Here, we describe the application of chalcogen containing SnIV guanidinate precursors for the production of tin(II) chalcogenide nanocrystals. Reaction of the stannylene(II) guanidinate complex [{Me2NC(NCy)2}2Sn] (1) with Ph2E2 (E = S, Se, Te), and CBr4 forms the SnIV complexes [{Me2NC(NCy)2}2Sn(Ch‐Ph)2] (2–4) and [{Me2NC(NCy)2}2SnBr2] (5), respectively. Complex 5 has been subsequently used for the synthesis of the corresponding SnIV mono chalcogenide complexes, [{Me2NC(NCy)2}2Sn = E] (6–8) by the reaction of 5 with Li2E systems. Isolated tin complexes have characterized by elemental analysis, NMR spectroscopy, and the molecular structures of complexes 2–5 determined by single‐crystal X‐ray diffraction. TG analysis showed that complexes 2–4 and 6–8 all have residual masses close to those expected for the formation of the corresponding “SnE” systems. Complexes 6–8 were assessed for their utility in the formation of nanocrystalline materials. The materials obtained were characterized by powder X‐ray diffraction (XRD), field emission scanning electron microscopy (FE‐SEM) and energy dispersive X‐ray analysis (EDX). Analysis showed formation of SnSe and SnTe from complexes 7 and 8, respectively.

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“…This makes them suitable for the absorption of a significant portion of the solar energy spectrum. Fine tuning of the band gap can be also achieved by changing the compounds from binary to a ternary (e.g., Sn 2 SeTe or Sn 2 SSe) or multicomponent alloy . We have studied from ab initio calculations, the stability and electronic structure of a layer as well as a few layers of SnS and SnSe.…”

Section: Introductionmentioning

confidence: 99%

Bandgap engineering in semiconducting one to few layers of SnS and SnSe

Deb

Kumar

2016

Physica Status Solidi (b)

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Ab initio calculations on one, two, and three layers of SnS and SnSe compound semiconductors show that they all have indirect band gap similar to bulk and it varies in the range of ∼0.5–1.6 eV within the generalized gradient approximation due to quantum confinement as well as structural relaxations. In two‐dimensional structures, the difference between the direct and the indirect band gap is very low and in the case of a SnS bilayer, this difference is minimum. Further, the band gaps calculated with HSE06 functional are in good agreement with the experimental results available for bulk and single layer. The total and projected densities of states show that the top of the valence band arises from the hybridization of Sn 5s and chalcogen p valence orbitals while the bottom of the conduction band has predominantly Sn 5p character. The effective mass of electrons and holes are found to be small. These features are similar to the recently discovered perovskite materials for photovoltaics with high efficiency and suggest that SnS and SnSe layered materials are also promising for photovoltaics. Further calculations on bulk and layers of GeS and GeSe are reported and the results are compared with those of SnS and SnSe structures.

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Mixed Organotin(IV) Chalcogenides: From Molecules to Sn‐S‐Se Semiconducting Thin Films Deposited by Spin‐Coating

Cited by 26 publications

References 50 publications

Functionalized Organotin‐Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization

Functionalized Organotin‐Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization

Oxidative Addition to Sn^II Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystals

Bandgap engineering in semiconducting one to few layers of SnS and SnSe

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Mixed Organotin(IV) Chalcogenides: From Molecules to Sn‐S‐Se Semiconducting Thin Films Deposited by Spin‐Coating

Cited by 26 publications

References 50 publications

Functionalized Organotin‐Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization

Functionalized Organotin‐Chalcogenide Complexes That Exhibit Defect Heterocubane Scaffolds: Formation, Synthesis, and Characterization

Oxidative Addition to SnII Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystals

Bandgap engineering in semiconducting one to few layers of SnS and SnSe

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Product

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Oxidative Addition to Sn^II Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystals