Mixed-Signal Circuits Using 250nm InP HBT Technology Integrated with 90nm CMOS

Abstract

Digital Analog converters using InP HBTs and 90nm CMOS have been designed using the novel HRL integration process developed under the DARPA COSMOS program. These circuits demonstrate that this process is capable of providing a compelling alternative to traditional Si/SiGe BiCMOS implementations for producing highly integrated state-of-the-art mixed signal and digitally-assisted analog circuits.