Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Yang, Huai; Pan, Longfei; Wang, Xiaoting; Deng, Hui‐Xiong; Zhong, Mianzeng; Zhou, Ziqi; Lou, Zheng; Shen, Guozhen; Wei, Zhongming

doi:10.1002/adfm.201904416

Cited by 48 publications

(30 citation statements)

References 52 publications

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“…The spatial distribution of VBM and CBM wave functions of SbI 3 is disparate along a ‐axis and b ‐axis. The Fermi Golden Rule is used to explain the optical and electric anisotropy in SbI 3 , which is expressed as a formula

R = (\frac{2 π}{ℏ}) \sum_{_{k_{c}, k_{v}}} {(||, ⟨c (||, H_{e R}) v⟩)}^{2} δ (E_{c} (k_{c}) - E_{v} (k) - ℏ ω)

, and optical absorbance is positive correlation with parameter R . Different charge density distribution along a ‐axis and b ‐axis has different 〈 c | H eR | v 〉, which causes the different values of R for photon absorption per unit time in a ‐axis and b ‐axis.…”

Section: Resultsmentioning

confidence: 99%

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI₃/Sb₂O₃ van der Waals Heterostructure

Xiao

Yang

Shen

et al. 2020

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Structural symmetry is a simple way to quantify the anisotropic properties of materials toward unique device applications including anisotropic transportation and polarization‐sensitive photodetection. The enhancement of anisotropy can be achieved by artificial symmetry‐reduction design. A core–shell SbI3/Sb2O3 nanowire, a heterostructure bonded by van der Waals forces, is introduced as an example of enhancing the performance of polarization‐sensitive photodetectors via symmetry reduction. The structural, vibrational, and optical anisotropies of such core–shell nanostructures are systematically investigated. It is found that the anisotropic absorbance of a core–shell nanowire is obviously higher than that of two single compounds from both theoretical and experimental investigations. Anisotropic photocurrents of the polarization‐sensitive photodetectors based on these core–shell SbI3/Sb2O3 van der Waals nanowires are measured ranging from ultraviolet (UV) to visible light (360–532 nm). Compared with other van der Waals 1D materials, low anisotropy ratio (Imax/Imin) is measured based on SbI3 but a device based on this core–shell nanowire possesses a relatively high anisotropy ratio of ≈3.14 under 450 nm polarized light. This work shows that the low‐symmetrical core–shell van der Waals heterostructure has large potential to be applied in wide range polarization‐sensitive photodetectors.

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R = (\frac{2 π}{ℏ}) \sum_{_{k_{c}, k_{v}}} {(||, ⟨c (||, H_{e R}) v⟩)}^{2} δ (E_{c} (k_{c}) - E_{v} (k) - ℏ ω)

Section: Resultsmentioning

confidence: 99%

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI₃/Sb₂O₃ van der Waals Heterostructure

Xiao

Yang

Shen

et al. 2020

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“…Recently, some low‐dimensional materials with intrinsic in‐plane anisotropy structure exhibit great potential to realize direct polarized photodetection without the use of polarization filters. [ 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ] Nevertheless, there are three main hurdles for polarimetric image sensors to achieve high‐resolution imaging at multispectral. First, the controllable growth of large‐size low‐dimensional single crystals is still a challenge.…”

Section: Introductionmentioning

confidence: 99%

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Yang

Zhao

et al. 2021

Advanced Science

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With the increasing demand for detection accuracy and sensitivity, dual-band polarimetric image sensor has attracted considerable attention due to better object recognition by processing signals from diverse wavebands. However, the widespread use of polarimetric sensors is still limited by high noise, narrow photoresponse range, and low linearly dichroic ratio. Recently, the low-dimensional materials with intrinsic in-plane anisotropy structure exhibit the great potential to realize direct polarized photodetection. Here, strong anisotropy of 1D layered bismuth sulfide (Bi 2 S 3 ) is demonstrated experimentally and theoretically. The Bi 2 S 3 photodetector exhibits excellent device performance, which enables high photoresponsivity (32 A W −1 ), I on /I off ratio (1.08 × 10 4 ), robust linearly dichroic ratio (1.9), and Hooge parameter (2.0 × 10 −5 at 1 Hz) which refer to lower noise than most reported low-dimensional materials-based devices. Impressively, such Bi 2 S 3 nanowire exhibits a good broadband photoresponse, ranging from ultraviolet (360 nm) to short-wave infrared (1064 nm). Direct polarimetric imaging is implemented at the wavelengths of 532 and 808 nm. With these remarkable features, the 1D Bi 2 S 3 nanowires show great potential for direct dual-band polarimetric image sensors without using any external optical polarizer.

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Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

Section: Low‐dimensional Semiconductor Nanomaterialsmentioning

confidence: 99%

“…Interestingly, flexible polarized PDs are a relatively novel device. For example, flexible polarization‐sensitive PDs prepared based on mixed valence state Sn II Sn IV S 3 NWs . By constructing the device on a PET substrate, repeated bending experiments show that the device has good mechanical stability (Figure C).…”

Section: Promising Applications Of Low‐dimensional Semiconductor Matementioning

confidence: 99%

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Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Mixed‐Valence‐Driven Quasi‐1D Sn^IISn^IVS₃ with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Cited by 48 publications

References 52 publications

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI₃/Sb₂O₃ van der Waals Heterostructure

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI₃/Sb₂O₃ van der Waals Heterostructure

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Cited by 48 publications

References 52 publications

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi2S3 Nanowire

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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Mixed‐Valence‐Driven Quasi‐1D Sn^IISn^IVS₃ with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI₃/Sb₂O₃ van der Waals Heterostructure

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI₃/Sb₂O₃ van der Waals Heterostructure

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire