Mixing and rectification properties of MIM diodes

Masalmeh, S.K.; Stadermann, Kirsten; Korving, Jasper

doi:10.1016/0921-4526(95)00558-7

Cited by 13 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ni-NiO-Ni junctions have been shown to be fast enough to rectify currents at optical frequencies, 10 and their rectifying properties are thought to be essentially invariant from dc to visible wavelengths. 11,12 An antenna exhibits a radiation resistance R A , which forms a voltage divider with the load resistance. If the load is a tunnel junction of differential resistance r j ϭ R A and negligible capacitance, the small-signal dc responsivity to received optical power P opt is…”

Section: A Infrared and Terahertz Detectionmentioning

confidence: 99%

Ni–NiO–Ni tunnel junctions for terahertz and infrared detection

Hobbs¹,

Laibowitz

Libsch³

2005

Appl. Opt.

View full text Add to dashboard Cite

We present complete experimental determinations of the tunnel barrier parameters (two barrier heights, junction area, dielectric constant, and extrinsic series resistance) as a function of temperature for submicrometer Ni-NiO-Ni thin-film tunnel junctions, showing that when the temperature-invariant parameters are forced to be consistent, good-quality fits are obtained between I-V curves and the Simmons equation for this very-low-barrier system (measured phi approximately 0.20 eV). A splitting of approximately 10 meV in the barrier heights due to the different processing histories of the upper and lower electrodes is clearly shown, with the upper interface having a lower barrier, consistent with the increased effect of the image potential at a sharper material interface. It is believed that this is the first barrier height measurement with sufficient resolution for this effect to be seen. A fabrication technique that produces high yields and consistent junction behavior is presented as well as the preliminary results of inelastic tunneling spectroscopy at 4 K that show a prominent peak at -59 meV, shifted slightly with respect to the expected transverse optic phonon excitation in bulk NiO but consistent with other surface-sensitive experiments. We discuss the implications of these results for the design of efficient detectors for terahertz and IR radiation.

show abstract

Section: A Infrared and Terahertz Detectionmentioning

confidence: 99%

Ni–NiO–Ni tunnel junctions for terahertz and infrared detection

Hobbs¹,

Laibowitz

Libsch³

2005

Appl. Opt.

View full text Add to dashboard Cite

show abstract

“…High-frequency rectifier diodes are crucial for applications such as solar energy harvesting, − THz mixers, − and infrared detectors. − Nanoscale metal/insulator/metal (MIM) rectifier diodes are actively investigated in a high-frequency regime owing to their ultrafast quantum-based electron-transport mechanism with a typical tunneling time of femtoseconds (10 –15 s). The performance of MIM devices under direct current (DC) is considered to be a noteworthy indicator of high-frequency performance, which mainly focuses on current asymmetry, nonlinearity, current density, and turn-on voltage .…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Rectification Ratio in an Asymmetric Metal/Semiconductor/Metal Nanoscale Tunneling Junction: Implications for High-Frequency Rectifiers

Feng

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

The ultrafast quantum-based electron-transport mechanism with a typical tunneling time of femtoseconds is appealing to fabricate high-frequency rectifier diode devices for applications such as solar energy harvesting, THz mixers, and infrared detectors. Here, we demonstrate an ultrahigh rectification of more than 10 4 and a large forward current density of 13.8 A/cm 2 at −2 V in the structure of a metal/semiconductor/metal (MSM, Pt/ZnO/TiN) nanoscale tunneling junction. Technology computer-aided design (TCAD) simulations demonstrate that high rectification originates from the switching of the electron-transport mechanism between direct tunneling (DT) and Fowler−Nordheim tunneling (FNT) under positive and negative voltage biases, respectively. The quantum-based FNT mechanism gives very slight temperature dependence of currents in a wide temperature range of 100−400 K. This work opens an avenue for high-frequency rectifier diodes based on MSM nanoscale tunneling junctions.

show abstract

“…With the increasing applications of nanoantennas that can focus electromagnetic energy into small localized area [1][2][3][4][5][6][7][8][9], energy harvesting gained more attention and considerable research has been devoted to it [10][11][12][13][14]. Energy harvesting at visible spectrum of electromagnetic waves has been mostly achieved using monocrystalline silicon which is an expensive process.…”

Section: Introductionmentioning

confidence: 99%

Glass Superstrate Nanoantennas for Infrared Energy Harvesting Applications

Kocakarin

Yeğin

2013

International Journal of Antennas and Propagation

View full text Add to dashboard Cite

Several nanoantennas for infrared energy harvesting applications at 30 THz are studied. Contrary to usual antenna designs, we implemented glass superstrate as opposed to glass substrate for better antenna performance. We defined a figure of merit (FOM) which includes antenna fractional bandwidth, peak gain, and half-power beamwidth of the antenna under consideration. Three different antenna structures with glass superstrate and one of them with glass substrate are studied in detail. According to our FOM definition, the Archimedean balanced spiral antenna exhibited superior performance among other structures with less sensitivity to the incoming polarization of the electromagnetic wave.

show abstract

Mixing and rectification properties of MIM diodes

Cited by 13 publications

References 7 publications

Ni–NiO–Ni tunnel junctions for terahertz and infrared detection

Ni–NiO–Ni tunnel junctions for terahertz and infrared detection

Ultrahigh Rectification Ratio in an Asymmetric Metal/Semiconductor/Metal Nanoscale Tunneling Junction: Implications for High-Frequency Rectifiers

Glass Superstrate Nanoantennas for Infrared Energy Harvesting Applications

Contact Info

Product

Resources

About