2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS) 2015
DOI: 10.1109/comcas.2015.7360494
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MMIC chipset for 300 GHz indoor wireless communication

Abstract: This contribution presents a full chip set dedicated to high data rate indoor wireless communication at a carrier frequency of 300 GHz. The analog frontend consists of a three-chip solution, namely a transmitter, receiver and local oscillator frequency multiplier. The active millimeter-wave monolithic integrated circuits are realized in a GaAs-based metamorphic high electron mobility transistor technology. The transmitter MMIC achieves a maximum output power of 3.6 dBm and an RF frequency range of 270 to 314 G… Show more

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Cited by 37 publications
(22 citation statements)
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“…Compared to implementations in other technologies, e.g. GaAs mHEMTs, with CLs of 11.4 dB [12] the CL of the demonstrated GFET receiver is still higher. However, the simulations show, that development and optimization of the GFETs and passive components will allow for further improvement of the receiver performance.…”
Section: Methodsmentioning
confidence: 79%
“…Compared to implementations in other technologies, e.g. GaAs mHEMTs, with CLs of 11.4 dB [12] the CL of the demonstrated GFET receiver is still higher. However, the simulations show, that development and optimization of the GFETs and passive components will allow for further improvement of the receiver performance.…”
Section: Methodsmentioning
confidence: 79%
“…For this purpose, an existing RF frontend is used. This frontend has been designed for zero-IF transmission and shows good performance in this range [11]. Two possibilities of realizing the superheterodyne architecture are analyzed.…”
Section: The Superheterodyne Conceptmentioning
confidence: 99%
“…The RF system consists of a 300 GHz transmitter and receiver based on monolithic millimeterwave integrated circuit (MMIC) packaged in split-block waveguide modules with a WR-3 output at the RF port and a WR-12 at the LO input. The MMICs have been described in detail in [12] and are fabricated in a 35nm metamorphic high electron mobility transistor (mHEMT) InGaAs technology with a maximum oscillation frequency above 1 THz and a maximum transit frequency of above 500 GHz [13]. Figure 3 shows the schematic of the active electronic transmitter and receiver MMICs.…”
Section: Rf Systemmentioning
confidence: 99%
“…In the recent past many research groups all over the globe have made significant progress in developing RF front ends and antennas enabling wireless data transmission at 300 GHz and beyond. Whereas at the receiving end of a link electronic approaches using mostly Schottky-Barrier Diodes are used, for the generation of the signals at the transmitting end both photonic [7,8] and electronic [4,19] approaches have been applied. Wireless data rates of 100 Gbit/s and beyond have been demonstrated, see e. g. [5].…”
Section: Hardware Demonstrationsmentioning
confidence: 99%