erromagnetic materials and devices are exploited in a variety of application fields today, e.g., in magnetic bearings, magnetic actuators, magnetic sensors, or in magnetic data storage devices. Many of these applications require a control of the magnetic properties in situ. Since the orientation of the magnetization vector M oen plays a key role, schemes enabling a control of the magnetization orientation are of particular relevance [1]. For example, in computer hard disk drives, the information is stored in magnetic bits -i.e., in regions on the magnetic disk with a well defined M orientation. us, writing information onto the hard disk is tantamount to (locally) changing M in a controlled fashion.
Magnetization Orientation Control SchemesSeveral qualitatively different magnetization orientation control schemes are established today. e most natural scheme relies on the magnetic field H as the control parameter. Indeed, M and H are conjugate variables in thermodynamics [2], and the ubiquitous magnetization hysteresis loop M(H) (see Fig. 3(b)) directly shows that the magnetization orientation can be inverted using an appropriate magnetic field. A very elegant magnetization orientation control scheme relies on the so-called spin torque effect, in which a spin-polarized electric current is exploited to change M [3]. is mechanism is particularly efficient in magnetic nanostructures, while in larger devices the Oersted magnetic field produced by the current flow dominates. Last but not least, novel magnetization control schemes are enabled in multifunctional materials [4]. e functionality hereby arises from the combined action of several, distinctively different material properties, as illustrated in Fig. 1 [5]. For example, an electric-field control of magnetization orientation, M(E), becomes possible if a finite magnetoelectric effect couples the magnetic and the dielectric properties of a given device.