High-transition-temperature superconductivity arises in copper oxides when holes or electrons are doped into the CuO 2 planes of their insulating parent compounds.While hole-doping quickly induces metallic behavior and superconductivity in many cuprates, electron-doping alone is insufficient in materials such as R 2 CuO 4 (R is Nd, Pr, La, Ce, etc.), where it is necessary to anneal an as-grown sample in a low-oxygen environment to remove a tiny amount of oxygen in order to induce superconductivity. Here we show that the microscopic process of oxygen reduction repairs Cu deficiencies in the as-grown materials and creates oxygen vacancies in the stoichiometric CuO 2 planes, effectively reducing disorder and providing itinerant carriers for superconductivity. The resolution of this long-standing materials issue suggests that the fundamental mechanism for superconductivity is the same for electron-and hole-doped copper oxides.The parent compounds of the high-transition-temperature (high-T c ) copper-oxide superconductors are antiferromagnetic (AF) Mott insulators composed of twodimensional CuO 2 planes separated by charge reservoir layers [1][2][3] . When holes are doped into these planes, the static long-range AF order is quickly destroyed and the lamellar copper-oxide materials become metallic and superconducting over a wide hole-doping range. In the case of electron-doped materials such as the T'-structured R 2 CuO 4 (R is Nd, Pr, La, Ce, etc.), electron-doping alone is insufficient, and annealing the as-grown sample in a low oxygen environment to remove a tiny amount of oxygen is necessary to induce superconductivity 2,3 . Previous work [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] suggests that oxygen reduction may influence mobile carrier concentrations 7 , decrease disorder/impurity scattering 8,10,11,23 , or suppress the long-range AF order 16,17,22 . However, the microscopic process of oxygen reduction, its effect on the large electron-hole phase diagram asymmetry and mechanism of superconductivity 2,3 are still unknown. Here we use x-ray and neutron scattering data, combined with chemical and thermo-gravimetric analysis measurements in the electron-doped Pr 0.88 LaCe 0.12 CuO 4 to show that the microscopic process of oxygen reduction is to repair Cu deficiencies in the as-grown materials 12,13 and to create oxygen vacancies in the stoichiometric CuO 2 (refs. 16,17,22), effectively repairing disorder in the CuO 2 planes and providing itinerant carriers for superconductivity.The role of the reduction process in the superconductivity of electron-doped high-T c copper oxides has been a long-standing unsolved problem. For the hole-doped cuprates, low doping levels (e.g. 5%) entirely suppress AF order and superconductivity appears over a wide range of hole concentrations (from 6% to 30%). In the case of T' structured electron-doped superconductors, doping alone by substituting the trivalent ions R 3+ in R 2 CuO 4 with tetravalent Ce 4+ is insufficient to induce superconductivity a...