<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>Noise in Cr Films from Spin-Density-Wave Polarization Rotation

Israeloff, N. E.; Weissman, M. B.; Garfunkel, G. A.; Scofield, John; Lucero, A.

doi:10.1103/physrevlett.60.152

Cited by 25 publications

(12 citation statements)

References 23 publications

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“…Thus the collective state is likely not to show rigid nematic order over distances much larger than the typical twinning scale of several tens of nanometers, consistent with neutron scattering results [35]. Although noise from disordered collective states is common, the onset of the low-T noise in these YBCO films is peculiar in showing simple thermally activated kinetics, rather than any sort of sharp transition or crossover [26,28,31]. Another low-frequency phenomenon in YBCO, internal friction, shows thermally activated features in this approximate temperature range [34,36], but none of the features provide an obvious match to our noise results, and the origins of the friction peaks are themselves unclear.…”

supporting

confidence: 67%

“…If the transport anisotropy comes from stripes, then any slow fluctuations in this local symmetry breaking should give rise to transport noise [25] as found in diverse other systems including antiferromagnets [26], spin glasses [27], and ferromagnets [28]. Discrete resistance steps seen in small samples of YBCO [24], and an unusual increase in normalized noise power found in larger samples [29,30] also suggest large collective fluctuators, as expected from stripes.…”

mentioning

confidence: 85%

“…Such effects are characteristic of noise from collective states in disordered systems [26][27][28]31]. Magnetic memory effects in the transport noise implies its connection with magnetic hysteresis [17], suggesting coupling to some other magnetic order.…”

mentioning

confidence: 97%

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Anomalous Noise in the Pseudogap Regime ofYBa2Cu3O7−δ

et al. 2010

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An unusual noise component is found near and below about 250 K in the normal state of underdoped YBCO and Ca-YBCO films. This noise regime, unlike the more typical noise above 250 K, has features expected for a symmetry-breaking collective electronic state. These include large individual fluctuators, a magnetic sensitivity, and aging effects. A possible interpretation in terms of fluctuating charge nematic order is presented.

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confidence: 67%

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confidence: 85%

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Anomalous Noise in the Pseudogap Regime ofYBa2Cu3O7−δ

et al. 2010

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“…These results provide strong evidence that the noise of most metal films is caused by thermally-activated carrier-defect interactions that lead to fluctuations in the mobility of the carriers. Exceptions to this general agreement between experimental data and the Dutta-Horn model are noted primarily for films (e.g., Ni, Cr) in which magnetic interactions dominate over defect scattering [18], [19], [23].…”

Section: Introductionmentioning

confidence: 85%

“…In all cases shown here, and most cases in the literature [1]- [3], [13]- [23], the Dutta-Horn model describes the noise well. Exceptions are observed for ferromagnetic (e.g., Ni [23]) and anti-ferromagnetic (e.g., Cr [18], [19]). In Ni, the noise is dominated by fluctuations in the ordering of magnetic domains [23]; the noise of Cr is attributed to rotations of the polarization of spin-density wave domains [19].…”

Section: Tomentioning

confidence: 94%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

161

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This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess ( ) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to noise. In contrast, for most semiconductor devices, the noise usually results from fluctuations in the number of carriers due to charge exchange between the channel and defects, usually at or near a critical semiconductor/insulator interface. The Dutta-Horn model describes the noise with high precision in most cases. Insight into the physical mechanisms that lead to noise in microelectronic materials and devices has been obtained via total-ionizing-dose irradiation and/or thermal an- nealing, as illustrated with several examples. With the assistance of the Dutta-Horn model, measurements of the noise magnitude and temperature and/or voltage dependence of the noise enable estimates of the energy distributions of defects that lead to noise. The microstructure of several defects and/or impurities that cause noise in MOS devices (primarily O vacancies) and GaN/AlGaN HEMTs (e.g., hydrogenated impurity centers, N vacancies, and/or Fe centers) have been identified via experiments and density functional theory calculations.Index Terms-Border traps, gallium nitride, HEMTs, interface traps, low-frequency noise, MOS devices, noise, oxide traps, radiation response, silicon carbide. 0018-9499

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Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Ghosh

Kargar

Mohammadzadeh

et al. 2021

Adv Elect Materials

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These layered quasi-2D van der Waals (vdW) compounds have interesting electronic, optical, and magnetic properties that can offer new device functionalities. [7][8][9][10][11][12][13][14][15][16][17][18][19] It has been demonstrated that some MPX 3 thin films are one of the rare few-layer vdW materials, which can have stable intrinsic antiferomagnetism (AF) even at mono-and few layer thicknesses. [20][21][22] The existence of weak vdW bonds between the MPX 3 layers makes them potential candidates for the 2D spintronic devices. The metal element of the MPX 3 materials modifies the bandgap from a medium bandgap of ≈1.3 eV to a wide bandgap of ≈3.5 eV. [1][2][3] The diverse properties of these materials tunable by proper selection and combination of the M and X elements make the MPX 3 materials an interesting platform for fundamental science and practical applications. [1][2][3][4][23][24][25][26][27][28][29][30] Among MPX 3 materials, FePS 3 is particularly promising. Its Ising-type ordering allows it to maintain the bulk-like magnetic behavior down to a single monolayer, which explains its moniker -"magnetic graphene." [31] The cleavage energy of FePSe 3 is slightly higher than that of graphite, while that for all other combinations of the M and X elements is lower than that of graphite. [32] The Néel temperature, T N , for FePS 3 is reported to be around 118 K. [1,2,20] It shows strong magnetic anisotropy. [15,33,34] In the crystal, each Fe atom is ferromagnetically coupled with two of its neighbors but the layer is antiferromagnetically coupled with nearest layers making it a zigzag-AF (z-AF) material. [1] The semiconducting nature of FePS 3 , with the energy bandgap of 1.5 eV, and a possibility of the strain engineering of electron and phonon band-structure create additional means for the control of both electron and spin transport. [9,17,35] The quantized spin waves, i.e., magnons in FePS 3 , have frequencies in the terahertz (THz) frequency range, [36,37] which makes this material interesting for THz magnonic devices. However, the electron and spin transport properties of FePS 3 have not been studied in sufficient details yet to assess the potential of such materials for THz applications.Here, we report the results of investigation of low-frequency current fluctuations, i.e., electronic noise, in thin films of FePS 3. The current-voltage (I-V) and noise characteristics

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1fNoise in Cr Films from Spin-Density-Wave Polarization Rotation

Cited by 25 publications

References 23 publications

Anomalous Noise in the Pseudogap Regime ofYBa2Cu3O7−δ

Anomalous Noise in the Pseudogap Regime ofYBa2Cu3O7−δ

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

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1fNoise in Cr Films from Spin-Density-Wave Polarization Rotation

Cited by 25 publications

References 23 publications

Anomalous Noise in the Pseudogap Regime ofYBa2Cu3O7−δ

Anomalous Noise in the Pseudogap Regime ofYBa2Cu3O7−δ

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

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Product

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Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions