<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mi>T</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:msub><mml:mi>TiSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>: Semimetal or Semiconductor?

Rasch, Julia; Stemmler, Torsten; Müller, Beate; Dudy, L.; Manzke, R.

doi:10.1103/physrevlett.101.237602

Cited by 95 publications

(93 citation statements)

References 23 publications

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“…However, given that the gap in TiSe 2 is very small, there is an ongoing debate over its exact value, 2,18,21,[23][24][25][26]36 which is irrelevant for the current discussion.…”

Section: 6mentioning

confidence: 99%

Chemical tuning of electrical transport inTi1−xPtxSe2−y

et al. 2015

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The structural and transport properties of polycrystalline Ti1-xPtxSe2-y (x ≤ 0.13, y ≤ 0.2) are studied, revealing highly tunable electrical properties, spanning nearly 10 orders in magnitude in scaled resistivity. Using x-ray and neutron diffraction, Pt is found to dope on the Ti site. In the absence of Pt doping (for x = 0), Se deficiency (y > 0) increases the metallic character of TiSe2, while a remarkable increase of the low temperature resistivity is favored by no Se deficiency (y = 0) and increasing amounts of doped Pt (x > 0). The chemical tuning of the resistivity in Ti1-xPtxSe2-y with Se deficiency and Pt doping results in a metal-to-insulator transition. The simultaneous Pt doping and Se deficiency (x,y > 0) confirms the competition between the two opposing trends in electrical transport, with the main outcome being the suppression of the charge density wave (CDW) transition below 2 K for y = 2x = 0.18. Band structure calculations on a subset of Ti1-xPtxSe2-y compositions are in line with the experimental observations.

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“…However, given that the gap in TiSe 2 is very small, there is an ongoing debate over its exact value, 2,18,21,[23][24][25][26]36 which is irrelevant for the current discussion.…”

Section: 6mentioning

confidence: 99%

Chemical tuning of electrical transport inTi1−xPtxSe2−y

et al. 2015

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“…In its normal phase (at high temperatures), TiSe 2 consists of hexagonal layers of Ti sandwiched by octahedrally coordinated Se atoms, the so-called 1T-polytype for transition metal dichalcogenides.It is either a semimetal [1,2,16] or a semiconductor [9,17,18] with a small indirect gap of order 100 meV or less. At 202 K it undergoes a transition into a commensurate 2x2x2 CDW state [16].…”

Section: Jahn-teller and Excitonic Insulator Scenariosmentioning

confidence: 99%

An alternative interpretation of recent ARPES measurements on TiSe ₂

2010

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Recently there has been a renewed interest in the charge density wave transition of TiSe2, fuelled by the possibility that this transition may be driven by the formation of an excitonic insulator or even an excitonic condensate. We show here that the recent ARPES measurements on TiSe2 can also be interpreted in terms of an alternative scenario, in which the transition is due to a combination of Jahn-Teller effects and exciton formation. The hybrid exciton-phonons which cause the CDW formation interpolate between a purely structural and a purely electronic type of transition. Above the transition temperature, the electron-phonon coupling becomes ineffective but a finite mean-field density of excitons remains and gives rise to the observed diffuse ARPES signals.

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“…At room temperature ͑RT͒, ARPES evidenced two main contributions near the Fermi energy E F , namely, a valence band ͑of Se 4p character͒ and conduction bands ͑of Ti 3d character͒, whose relative energy positions are still controversial. 9,10 At low temperature ͑LT͒, intense backfolded bands, characteristic of the CDW, appear. The origin of the CDW is not completely settled yet and resists to conventional explanations.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent photoemission on1T-TiSe2: Interpretation within the exciton condensate phase model

et al. 2010

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The charge-density-wave phase transition of 1T-TiSe 2 is studied by angle-resolved photoemission over a wide temperature range. An important chemical-potential shift which strongly evolves with temperature is evidenced. In the framework of the exciton condensate phase, the detailed temperature dependence of the associated order parameter is extracted. Having a mean-field-like behavior at low temperature, it exhibits a nonzero value above the transition, interpreted as the signature of strong excitonic fluctuations, reminiscent of the pseudogap phase of high-temperature superconductors. Integrated intensity around the Fermi level is found to display a trend similar to the measured resistivity and is discussed within the model.

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1T−TiSe2: Semimetal or Semiconductor?

Cited by 95 publications

References 23 publications

Chemical tuning of electrical transport inTi1−xPtxSe2−y

Chemical tuning of electrical transport inTi1−xPtxSe2−y

An alternative interpretation of recent ARPES measurements on TiSe ₂

Temperature-dependent photoemission on1T-TiSe2: Interpretation within the exciton condensate phase model

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1T−TiSe2: Semimetal or Semiconductor?

Cited by 95 publications

References 23 publications

Chemical tuning of electrical transport inTi1−xPtxSe2−y

Chemical tuning of electrical transport inTi1−xPtxSe2−y

An alternative interpretation of recent ARPES measurements on TiSe 2

Temperature-dependent photoemission on1T-TiSe2: Interpretation within the exciton condensate phase model

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An alternative interpretation of recent ARPES measurements on TiSe ₂