We
use in situ transmission electron microscopy to directly observe,
at high temporal and spatial resolution, the interaction of ferroelectric
domains and dislocation networks within BiFeO3 thin films.
The experimental observations are compared with a phase field model
constructed to simulate the dynamics of domains in the presence of
dislocations and their resulting strain fields. We demonstrate that
a global network of misfit dislocations at the film–substrate
interface can act as nucleation sites and slow down domain propagation
in the vicinity of the dislocations. Networks of individual threading
dislocations emanating from the film–electrode interface play
a more dramatic role in pinning domain motion. These dislocations
may be responsible for the domain behavior in ferroelectric thin-film
devices deviating from conventional Kolmogorov–Avrami–Ishibashi
dynamics toward a Nucleation Limited Switching model.