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-Sn phase on Si(111): Spin texture of a two-dimensional Mott state

Jäger, Monika; Brand, C.; Weber, A. P.; Fanciulli, Mauro; Dil, J. Hugo; Pfnür, H.; Tegenkamp, Christoph

doi:10.1103/physrevb.98.165422

Cited by 11 publications

(9 citation statements)

References 22 publications

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“…surface is a rowwise antiferromagnetic structure [9,19] in a (2 √ 3 × √ 3) supercell. This is supported by recent experimental studies using spin-selective photoemission [20], and forms the basis for the present study.…”

Section: Introductionsupporting

confidence: 86%

Phonon-induced electronic relaxation in a strongly correlated system: The Sn/Si(111) (3×3) adlayer revisited

Zahedifar

Kratzer

2019

Phys. Rev. B

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The ordered adsorbate layer Sn/Si(111) ( √ 3 × √ 3) with coverage of one third of a monolayer is considered as a realization of strong electronic correlation in surface physics. Our theoretical analysis shows that electronhole pair excitations in this system can be long-lived, up to several hundred nanoseconds, since the decay into surface phonons is found to be a highly non-linear process. We combine first-principles calculations with help of a hybrid functional (HSE06) with modeling by a Mott-Hubbard Hamiltonian coupled to phononic degrees of freedom. The calculations show that the Sn/Si(111) ( √ 3 × √ 3) surface is insulating and the two Sn-derived bands inside the substrate band gap can be described as the lower and upper Hubbard band in a Mott-Hubbard model with U = 0.75 eV. Furthermore, phonon spectra are calculated with particular emphasis on the Sn-related surface phonon modes. The calculations demonstrate that the adequate treatment of electronic correlations leads to a stiffening of the wagging mode of neighboring Sn atoms; thus, we predict that the onset of electronic correlations at low temperature should be observable in the phonon spectrum, too. The deformation potential for electron-phonon coupling is calculated for selected vibrational modes and the decay rate of an electron-hole excitation into multiple phonons is estimated, substantiating the very long lifetime of these excitations.

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Section: Introductionsupporting

confidence: 86%

Phonon-induced electronic relaxation in a strongly correlated system: The Sn/Si(111) (3×3) adlayer revisited

Zahedifar

Kratzer

2019

Phys. Rev. B

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“…As shown in Figure (a) and (b) energy distribution curves (EDC) were taken at two different points in k ‐space at 40 K. Along the [1

\bar{1}

0]‐direction, the spectral weight at E F is strongly suppressed for both the flat (green line) and vicinal (red line) surface. On the other hand, whereas along the 11

\bar{2}

‐direction the surface state on the flat surface shows a clear Mott gap, a considerable intensity is found at E F for the same state on the vicinal surface. The band maps, which correspond to the EDCs, are shown in Figure (c) and (d), as well as curvature plots ((e) and (f)).…”

Section: Resultsmentioning

confidence: 96%

“…The Sn/Si(111) data were reproduced from data shown in ref. . The dashed lines refer to band structure calculations for Sn/Si(111) …”

Section: Resultsmentioning

confidence: 99%

“…Recently, it was shown that the two‐dimensional analog, that is, the α ‐Sn phase on Si(111), gives rise to a Mott phase which is to some extent influenced by SOC, even though the SOC strength and the resulting Rashba‐splitting is significantly smaller compared to the isoelectronic Pb. Electronically, the Mott phase gives rise to a (

2 \sqrt{3} \times \sqrt{3}

) unit cell due to the antiferromagnetic ordering between adjacent rows of the

(\sqrt{3} \times \sqrt{3})

‐structure …”

Section: Introductionmentioning

confidence: 99%

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Formation of Sn‐Induced Nanowires on Si(557)

Jäger

Pfnür

Fanciulli

et al. 2019

Physica Status Solidi (b)

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In this study, the growth of Sn on Si(557) surfaces by means of scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission is analyzed. Depending on the Sn submonolayer coverage, various Sn-nanowires are identified. For Sn-coverages above 0.5 ML,)-reconstructions are found. In particular, these phases cover extended (111)-areas, thus leading to an inhomogeneous refacetting of the Si(557) surface. The (223)-facets between the mini-(111) terraces reveal structures, which resemble a Â2 reconstruction along edges. The initial step structure of the Si(557) surface is maintained for Sncoverages below 0.5 ML, showing the α-Sn phase on 3 nm wide (111)terraces. In contrast to the 2D Mott state of α-Sn/Si(111), this confinement seems to quench the correlated electronic phase yielding metallic surface states at 40 K, in accordance with photoemission.

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“…The growth of α-Sn thin films has been achieved on a number of substrates, including Si [40][41][42][43][44] and Ge. [45][46][47][48] However, to stabilize the α-phase, InSb(001) [49,50] and Sb-terminated InSb(111)B [15,19] have been shown to be ideally suited, providing a compressive strain of 0.14% in both cases and thus stabilizing the α-phase up to 170 C. [15] In search for a suitable FM that provides a low-mismatch growth template, we evaluated materials that are compatible with the (111) face of α-Sn.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 99%

Study of Spin Pumping through α‐Sn Thin Films

Gladczuk

Gładczuk

Dłuźewski

et al. 2021

Physica Rapid Research Ltrs

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Elemental tin in the α‐phase is an intriguing member of the family of topological quantum materials. In thin films, with decreasing thickness, α‐Sn transforms from a 3D topological Dirac semimetal (TDS) to a 2D topological insulator (TI). Getting access to and making use of its topological surface states is challenging and requires interfacing to a magnetically ordered material. Herein, the successful epitaxial growth of α‐Sn thin films on Co, forming the core of a spin‐valve structure, is reported. Time‐ and element‐selective ferromagnetic resonance experiments are conducted to investigate the presence of spin pumping through the spin‐valve structure. A rigorous statistical analysis of the experimental data using a model based on the Landau–Lifshitz–Gilbert–Slonczewski equation is applied. A strong exchange coupling contribution is found, however no unambiguous proof for spin pumping. Nevertheless, the incorporation of α‐Sn into a spin valve remains a promising approach given its simplicity as an elemental TI and its room‐temperature application potential.

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α -Sn phase on Si(111): Spin texture of a two-dimensional Mott state

Cited by 11 publications

References 22 publications

Phonon-induced electronic relaxation in a strongly correlated system: The Sn/Si(111) (3×3) adlayer revisited

Phonon-induced electronic relaxation in a strongly correlated system: The Sn/Si(111) (3×3) adlayer revisited

Formation of Sn‐Induced Nanowires on Si(557)

Study of Spin Pumping through α‐Sn Thin Films

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