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Förster, Tobias; Krüger, Peter; Rohlfing, Michael

doi:10.1103/physrevb.93.205442

Cited by 69 publications

(76 citation statements)

References 53 publications

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“…) , which corresponds to a period l M M 1 0 dW | | for oscillation of the gap as a function of the effective 2D-system width scale l Ω . This estimate agrees with similar ones derived previously using a hard-wall confinement [25] and a tight-binding model [32], respectively, but deviations from such effective-Hamiltonian-based results occur in few-layer samples [29,35,36]. In contrast, no gap oscillations are discernible in our model with parameters applicable to Bi 2 Se 3 , for which the mixing of bare harmonic-oscillator subbands is always important due to the large value of g  .…”

Section: Affects Topological Band Inversion On a Basic Level They Casupporting

confidence: 91%

“…See the right panel of figure 3 for a pertinent example, and the simulations provided as supplemental data for further illustration. Again, it should be emphasized that our results regarding the evolution of band inversions with quantum confinement are based on the effective-Hamiltonian approach from which we expect deviations to occur in few-layer samples [29,35,36].…”

Section: Confinement Tuning Of Band Inversion and Surface-state Hybrimentioning

confidence: 90%

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Manipulating topological-insulator properties using quantum confinement

Kotulla

Zülicke

2017

New J. Phys.

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Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have conductive surface or edge states. Topological materials show various unusual physical properties and are surmised to enable the creation of exotic Majorana-fermion quasiparticles. How the signatures of topological behavior evolve when the system size is reduced is interesting from both a fundamental and an application-oriented point of view, as such understanding may form the basis for tailoring systems to be in specific topological phases. This work considers the specific case of quantum-well confinement defining two-dimensional layers. Based on the effective-Hamiltonian description of bulk topological insulators, and using a harmonic-oscillator potential as an example for a softer-than-hard-wall confinement, we have studied the interplay of band inversion and size quantization. Our model system provides a useful platform for systematic study of the transition between the normal and topological phases, including the development of band inversion and the formation of massless-Dirac-fermion surface states. The effects of bare size quantization, twodimensional-subband mixing, and electron-hole asymmetry are disentangled and their respective physical consequences elucidated.

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Section: Affects Topological Band Inversion On a Basic Level They Casupporting

confidence: 91%

Section: Confinement Tuning Of Band Inversion and Surface-state Hybrimentioning

confidence: 90%

Manipulating topological-insulator properties using quantum confinement

Kotulla

Zülicke

2017

New J. Phys.

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“…2c) two chiral surface states are clearly seen to connect the conduction band and valence band to form a single Dirac-type contact at the Γ point and aligning with the Fermi energy. Our calculations are in good agreement with previous calculations [18,19]. shows the calculated XAS spectra in the GGA approximation together with the experimental spectra measured by Chen et al [6].…”

Section: Computational Detailssupporting

confidence: 82%

Electronic Structure and X-Ray Magnetic Circular Dichroism in Sm-Doped Bi₂Se₃

et al. 2018

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We studied the structural, electronic, and magnetic properties of Sm-doped Bi2Se3 using a GGA approximation in a frame of the fully relativistic spin-polarized Dirac linear muffin-tin orbital band-structure method. The Xray absorption spectra (XAS) and X-ray magnetic circular dichroism at the Sm M4,5 edges were investigated theoretically from first principles. The calculated results are in good agreement with experimental data. The complex fine structure of the Sm M4,5 XAS in Sm-doped Bi2Se3 was found to be not compatible with a pure Sm 3 valency state. The interpretation demands mixed valent states.

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“…This enhancement is significant only for the thin films ∆ ∼ v 2 F /r. If there are more than two layers then gap is significantly suppressed in comparison with the spin orbit coupling parameter ∆ ≪ v 2 F /r ∼ 1eV [33]. Thus, an effect of the enhancement of spin conductivity in a metallic region by the hybridization between the different sides of the topological insulator is significant only in a few layer samples.…”

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confidence: 99%

Thin film of a topological insulator as a spin Hall insulator

Akzyanov

2019

Phys. Rev. B

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We study spin conductivity of the surface states in a thin film of a topological insulator with Kubo formulas. Hybridization between the different sides of the film opens a gap at the Dirac point. We found that in the gapped region spin conductivity remains finite. In the gapless region near the band gap spin conductivity is enhanced. These findings make a thin film of a topological insulator as a promising material for spintronic applications.

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GWcalculations forBi2Te3andSb2Te

Cited by 69 publications

References 53 publications

Manipulating topological-insulator properties using quantum confinement

Manipulating topological-insulator properties using quantum confinement

Electronic Structure and X-Ray Magnetic Circular Dichroism in Sm-Doped Bi₂Se₃

Thin film of a topological insulator as a spin Hall insulator

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GWcalculations forBi2Te3andSb2Te

Cited by 69 publications

References 53 publications

Manipulating topological-insulator properties using quantum confinement

Manipulating topological-insulator properties using quantum confinement

Electronic Structure and X-Ray Magnetic Circular Dichroism in Sm-Doped Bi2Se3

Thin film of a topological insulator as a spin Hall insulator

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Electronic Structure and X-Ray Magnetic Circular Dichroism in Sm-Doped Bi₂Se₃