2021
DOI: 10.1016/j.optmat.2021.111614
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Mn-doped molybdenum trioxide for photocatalysis and solar cell applications

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Cited by 17 publications
(7 citation statements)
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“…The staggered band gap arrangement [72], for which both the conduction band (CB 1 ) and valence band (VB 1 ) of one semiconductor lie either above or below the (VB 2 ) and (CB 2 ) of other semiconductors is in conformity with the present product semicondting components [70]. For example, the mainly existed MoS 2 and MoO 3 semiconductors having lower (1.2-1.9 eV) [64] and higher (2.8-3.2 eV) [65][66][67] energy gaps, respectively can be coupled with a staggerd gap arrangement shown in figure 16. As reported [73,74], this band gap arrangement yields a better results of photcatalytic activity.…”
Section: Photocatalytic Activity Under Vis Light Irradiationmentioning
confidence: 81%
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“…The staggered band gap arrangement [72], for which both the conduction band (CB 1 ) and valence band (VB 1 ) of one semiconductor lie either above or below the (VB 2 ) and (CB 2 ) of other semiconductors is in conformity with the present product semicondting components [70]. For example, the mainly existed MoS 2 and MoO 3 semiconductors having lower (1.2-1.9 eV) [64] and higher (2.8-3.2 eV) [65][66][67] energy gaps, respectively can be coupled with a staggerd gap arrangement shown in figure 16. As reported [73,74], this band gap arrangement yields a better results of photcatalytic activity.…”
Section: Photocatalytic Activity Under Vis Light Irradiationmentioning
confidence: 81%
“…As previously stated, the current material product is composed mainly of heterojunction multicomponentes, such as MoS 2 and MoO 3 having band gap values of (1.2-1.9 eV) [64] and (2.8-3.2 eV) [65][66][67], respectively, in addition to Zn metallic element. The photocatalytic activity strongly depends on the band gap arrangement of distincit semiconductor [68][69][70][71] due to its role in electron-hole separation capability.…”
Section: Photocatalytic Activity Under Vis Light Irradiationmentioning
confidence: 92%
“…To calculate the activation energy for a single layer of ZnS film and multilayers of ZCZ and ZAZ films, the Arrhenius relationship [48] used in the following form: where T amb is the ambient temperature, . 0 s is the pre-exponential factor, which is temperature independent, and E D is the activation energy of conduction Ln versus.…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…From the negative slope of Ln s ( ) verses T 1000/ in figure 12, the values of the activation energy calculated and plotted in figure 13 show the increase in activation energy value for a single layer of ZnS film under CO 2 gas flow and the decrease in it for multilayers of ZCZ, and ZAZ films, which agree with the behavior of resistivity in figure 10. This decrease in activation energy reflects the increased contribution of electronic conduction [48] which means the inverse relation between the activation energy and the electronic conduction (see figure 13).…”
Section: Electrical Propertiesmentioning
confidence: 99%
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