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Szczytko, Jacek; Twardowski, A.; Świątek, K.; Palczewska, M.; Tanaka, Masaaki; Hayashi, Toshiaki; Ando, Koji

doi:10.1103/physrevb.60.8304

Cited by 114 publications

(73 citation statements)

References 40 publications

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“…The absorption edge was very broad and no excitonic structure was visible. The sense of the edge splitting is the same as was for bulk GaAs:Mn [52], i.e. it is of FM-type.…”

Section: S P-d Exchange Interactionmentioning

confidence: 74%

“…The situation for the GaMnAs epilayers is different: only a single EPR line was observed with the g-factor around 2.00 [52]. This line was ascribed to the Acenter.…”

Section: The Nature Of Mn Impuritymentioning

confidence: 88%

“…For bulk GaMnAs crystals, with a low Mn concentration (x < 0.001) exciton splits in a FM way, suggesting FM p-d exchange. The observed sense of bands splitting was interpreted as dominance of FM p-d exchange channels of A0 over the AFM paths of A0 and A - [52]. The exciton splitting is well parametrized by macroscopic magnetization.…”

Section: S P-d Exchange Interactionmentioning

confidence: 91%

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Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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“…The absorption edge was very broad and no excitonic structure was visible. The sense of the edge splitting is the same as was for bulk GaAs:Mn [52], i.e. it is of FM-type.…”

Section: S P-d Exchange Interactionmentioning

confidence: 74%

“…The situation for the GaMnAs epilayers is different: only a single EPR line was observed with the g-factor around 2.00 [52]. This line was ascribed to the Acenter.…”

Section: The Nature Of Mn Impuritymentioning

confidence: 88%

Section: S P-d Exchange Interactionmentioning

confidence: 91%

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Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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“…Guided by the growing amount of experimental results, including informative magnetic resonance [59,60] and photoemission [61][62][63] studies, a theoretical model of the hole-controlled ferromagnetism in III-V, II-VI, and group IV semiconductors containing Mn was proposed [64,65]. These materials exhibit characteristics specific to both charge transfer insulators and strongly correlated disordered metals.…”

Section: Spatially Uniform Ferromagnetic Dmsmentioning

confidence: 99%

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Dietl

2007

Acta Phys. Pol. A

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In this paper the present understanding of the origin of ferromagnetic response that has been detected in a number of diluted magnetic semiconductors and diluted magnetic oxides at room temperature is outlined. It is argued that in these systems, owing to a typically small solubility of magnetic ions, crystallographic or chemical phase separation into regions with a large and a small concentration of magnetic component takes place. The ferromagnetic signatures then come from the regions with a large concentration of magnetic ions, which show non-zero spontaneous magnetization up to the blocking temperature, whose magnitude is proportional to the nanocrystal volume and magnetic anisotropy. Novel methods enabling a control of nano-assembling of magnetic nanocrystals in non-conducting matrices as well as possible functionalities of these spatially modulated magnetic systems are described. We also discuss phase separations into paramagnetic and ferromagnetic regions, which are driven by the Anderson-Mott localization and/or competing ferromagnetic and antiferromagnetic interactions. Finally, the question whether the high temperature ferromagnetism is possible in materials without magnetic ions is addressed.

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“…Guided by the growing amount of experimental results, including informative magnetic resonance (Szczytko et al, 1999;Fedorych, Hankiewicz, Wilamowski and Sadowski, 2002) and photoemission (Mizokawa et al, 2002;Rader et al, 2004;Hwang et al, 2005) studies, a theoretical model of the hole-controlled ferromagnetism in III-V, II-VI, and group IV semiconductors containing Mn was proposed (Dietl et al, 2000(Dietl et al, , 2001. These materials exhibit characteristics specific to both charge transfer insulators and strongly correlated disordered metals.…”

Section: Introductionmentioning

confidence: 99%

Diluted Ferromagnetic Semiconductors—Theoretical Aspects

Dietl

2007

Handbook of Magnetism and Advanced Magnetic Materials

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This chapter reviews theoretical understanding of ferromagnetic response that has been detected in diluted magnetic semiconductors (DMS). Particular attention is paid to those ferromagnetic DMS in which no precipitation of other crystallographic phases has been observed. It is argued that these materials can be divided into three categories. The first consists of (Ga,Mn)As, heavily doped p‐(Zn,Mn)Te, and related compounds. In these solid solutions, the theory built on p–d Zener's model of hole‐mediated ferromagnetism and on either the Kohn‐Luttinger kp theory or the multiorbital tight‐binding approach describes qualitatively, and often quantitatively, thermodynamic, micromagnetic, optical, and transport properties. Moreover, the understanding of these materials has provided a basis for the development of novel methods enabling magnetization manipulation and switching. To the second group, belong compounds in which a competition between long‐range ferromagnetic and short‐range antiferromagnetic interactions and/or the proximity of the localization boundary lead to an electronic nanoscale phase separation that results in characteristics similar to colossal magnetoresistance oxides. Finally, in a number of compounds a chemical nanoscale phase separation into the regions with small and large concentrations of the magnetic constituent is present. Methods of controlling the spinodal decomposition and possible functionalities of these systems are outlined.

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Mn impurity inGa1−xMnxAsepilayers

Cited by 114 publications

References 40 publications

Diluted Magnetic III-V Semiconductors

Diluted Magnetic III-V Semiconductors

High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides

Diluted Ferromagnetic Semiconductors—Theoretical Aspects

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