Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Bartoš, I.; Píš, Igor; Kobata, Masaaki; Kobayashi, Kiyoshi; Cukr, M.; Jiřı́ček, P.; Sugiyama, Takeharu; Ikenaga, Eiji

doi:10.1103/physrevb.83.235327

Cited by 12 publications

(5 citation statements)

References 17 publications

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“…In particular, core level photoemission combined with configuration-interaction cluster calculations were used to address the Mn valence and the p-d interaction between Mn impurity and host semiconductors [40]. Since these early experimental reports, many efforts have been focused on reaching a reliable control of surface and interface effects by means of standard surface preparation methods, e.g., sputtering and annealing [26,[97][98][99][100][101]; this is mainly due to the extreme surface sensitivity of PES, which for typical XPS photon energies (∼50-800 eV) results in a probing depth less than 10 Å (see figure 2). In recent years, hard x-ray PES (HAXPES) has become a new tool for the analysis of bulk electronic properties: it offers an information depth of more than 6 nm for electron kinetic energy above 5 keV, corresponding to bulk sensitivity [102,103], thus reducing the uncertainties connected to surface preparation.…”

Section: Core Level Pesmentioning

confidence: 99%

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Edmonds

Laan

Panaccione

2015

Semicond. Sci. Technol.

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Diluted magnetic semiconductors, and particularly (Ga,Mn)As, have been the subject of considerable debate regarding the nature of the interplay between their electronic and magnetic properties. Here, we review the recent insights and advances offered by synchrotron-based x-ray spectroscopies studies of these materials, with a particular focus on x-ray magnetic circular dichroism and hard x-ray photoelectron spectroscopy. Such measurements offer a combined probe of the element-specific magnetic order and the local densities of states, revealing detailed information about the hybridization of diluted magnetic ions and the host crystal.

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Section: Core Level Pesmentioning

confidence: 99%

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Edmonds

Laan

Panaccione

2015

Semicond. Sci. Technol.

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“…Due to the significant influence of growth conditions 44 and surface cleanliness on the experimental spectra of (Ga,Mn)As, previous studies resulted in contradicting conclusions 17,39,45 , which were partly explained in Refs. 46,47 by the surface decomposition during annealing and by the high reactivity of Mn 48,49 .…”

Section: Sample Preparation and Experimental Methodsmentioning

confidence: 99%

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Yastrubchak,

Tataryn,

Gluba

et al. 2023

Sci Rep

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The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease in the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin–orbit split-off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

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“…Due to the significant influence of growth conditions [44] and surface cleanliness on the experimental spectra of (Ga,Mn)As, previous studies resulted in contradicting conclusions [17,39,45], which were partly explained in Refs. [46,47] by the surface decomposition during annealing and by the high reactivity of Mn [48,49].…”

Section: Figmentioning

confidence: 99%

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Yastrubchak

Tataryn

Gluba

et al. 2023

Preprint

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The influence of the addition of Bi to the (Ga,Mn)As dilute ferromagnetic semiconductor on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural perfection have been grown using low-temperature molecular-beam epitaxy. Post-growth annealing of the samples improves their structural and magnetic properties and increases the hole concentration in the layers. Hard X-ray angle-resolved photoemission spectroscopy (HARPES) reveals a strongly dispersing band in the Mn-doped layers, which crosses the Fermi energy and is caused by the high concentration of Mn-induced itinerant holes located in the valence band. An increased density of states near the Fermi level is attributed to additional localized Mn states. In addition to a decrease of the chemical potential with increasing Mn doping, we find significant changes in the valence band caused by the incorporation of a small atomic fraction of Bi atoms. The spin-orbit split off band is shifted to higher binding energies, which is inconsistent with the impurity band model of the band structure in (Ga,Mn)As. Spectroscopic ellipsometry and modulation photoreflectance spectroscopy results confirm the valence band modifications in the investigated layers.

show abstract

Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

Cited by 12 publications

References 17 publications

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

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