Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

Wadekar, P. V.; Chang, Ching Wen; Zheng, Yu-Jung; Guo, Songqing; Hsieh, Wen-Hsuan; Cheng, Chia-Ming; Ma, M.; Lai, Wei Chih; Sheu, Jinn-Kong; Chen, Q.Y.; Tu, Li‐Wei

doi:10.1016/j.apsusc.2018.12.163

Cited by 23 publications

(6 citation statements)

References 57 publications

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“…A typical full spectrum of the 2D-GaN flakes is depicted in Figure h for different elements with their characteristic electronic transitions. In Figure i, the Ga 3d XPS peak reveals a principal signal of Ga–N with a binding energy at 18.06 eV, accompanied by a trace of a characteristic peak of O 2s at 22.93 eV . The presence of the O signal may have originated from the SiO 2 substrate and oxygen adsorbed on the flake surface.…”

Section: Resultsmentioning

confidence: 96%

“…In Figure 2i, the Ga 3d XPS peak reveals a principal signal of Ga−N with a binding energy at 18.06 eV, accompanied by a trace of a characteristic peak of O 2s at 22.93 eV. 40 The presence of the O signal may have originated from the SiO 2 substrate and oxygen adsorbed on the flake surface. Ga 2p 3/2 and 2p 1/2 core levels are deconvoluted with the Ga−N bonding state at 1116.51 and 1143.46 eV, respectively, as shown in Figure 2j.…”

Section: Resultsmentioning

confidence: 99%

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Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

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Molybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS2/GaN p–n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

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“…Combined, these findings indicate: (i) a homogenous magnetic constitution of the material, (ii) the superexchange mechanism at work, (iii) the Fermi level pinning at the mid-gap Mn 3+ level, and consequently its highly insulating character. Other works also show that Mn +3 or Mn 2+ ions create relatively deep level defects in the band gap of GaN [41]. Importantly, it should be added that the established a very good command over the MBE growth allows to produce on demand high structural quality (Ga,Mn)N with x up to 10% [10] [29].…”

Section: Methodsmentioning

confidence: 99%

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Kalbarczyk

Dybko

Gas

et al. 2019

Journal of Alloys and Compounds

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Schottky barrier height and the ideality factor  are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading dislocation density GaN:Si template. The observed above 10 M resistances already at room temperature are indicative that a nearly conductive-dislocation-free electrical properties are achieved. The analysis of temperature dependence of the forward bias I-V characteristics in the frame of the thermionic emission model yields Ti-(Ga,Mn)N Schottky barrier height to be slightly lower but close in character to other metal/GaN junctions. However, the large magnitudes of the ideality factor  > 1.5 for T  300 K, point to a sizable current blocking in the structure. While it remains to be seen whether it is due to the presence of (Ga,Mn)N barrier or due to other factors which reduce the effective area of the junction, an existence of a substantial serial resistance may hold the key to explain similar observations in other devices of a corresponding structure and technological relevance.

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“…The plot of 5MZO showed the typical peak of Mn 2+ . 20,51 After the moderate introduction of N 2 H 4 •H 2 O in 5MZO-5 DMS, the average BE of Mn decreased where the maximum peak fell between Mn and Mn 2+ . When 10 mL of N 2 H 4 •H 2 O was added, the average BE of Mn in 5MZO-10 DMS shifted toward the higher-energy side compared with 5MZO-5 DMS, but it was still lower than that of 5MZO.…”

Section: Anticorrosion Performancementioning

confidence: 99%

Anticorrosion Performance and Application of a Mixed-Valence Mn⁰_xMn²⁺_0.05–xZn_0.95O Solid Solution Induced by Magnetic Doping

Zhang

Zhou

Sun

et al. 2019

Ind. Eng. Chem. Res.

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Mixed-valence compounds are important materials in the field of chemistry and physics due to their excellent physicochemical properties and magnetoelectric effects. Under the protection of nitrogen, the mixed-valence Mn0 x Mn2+ 0.05–x Zn0.95O dilute magnetic solid solutions (5MZO DMSs) are prepared, simultaneously inhibiting both anode and cathode electrochemical corrosion. The penetration and transfer of oxygen are slowed down due to the abundant crystal defects in 5MZO-5 DMS, causing anoxia in the cathode. In addition, plenty of photoelectrons generated by 5MZO-5 DMS inhibit the reaction of iron electron loss, and the path of charge transfer is prolonged due to the excellent magnetic property of 5MZO-5 DMS. Thus, the anticorrosion performance of 5MZO-5 DMS is enhanced to 206.5% compared to that of the ZnO material after 72 h. In particular, the 5MZO-5 DMS is resistant to the rapid corrosion attenuation at high temperatures, meeting the need of anticorrosion under the harsh environment.

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Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

Cited by 23 publications

References 57 publications

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Anticorrosion Performance and Application of a Mixed-Valence Mn⁰_xMn²⁺_0.05–xZn_0.95O Solid Solution Induced by Magnetic Doping

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Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

Cited by 23 publications

References 57 publications

Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire

Anticorrosion Performance and Application of a Mixed-Valence Mn0xMn2+0.05–xZn0.95O Solid Solution Induced by Magnetic Doping

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Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Anticorrosion Performance and Application of a Mixed-Valence Mn⁰_xMn²⁺_0.05–xZn_0.95O Solid Solution Induced by Magnetic Doping