MnBi2Te4-family intrinsic magnetic topological materials

He, Ke

doi:10.1038/s41535-020-00291-5

Cited by 85 publications

(39 citation statements)

References 38 publications

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“…The observed weakening of the free charge carrier density at T N could be related to the opening of a gap in the electronic surface states when the antiferromagnetic order sets in. He et al [23] discussed an opening of the topological surface gap in the case of pure MBT when the magnetic moments start to align in an A-type antiferromagnetic order. Although infrared spectroscopy is mainly bulk and not surface sensitive, a contribution of surface states, especially during the onset of magnetic order, has been reported in recent studies [24,25].…”

Section: Resultsmentioning

confidence: 99%

“…This could also be the case for MBST studied here. In the case of pure MBT, He et al [23] discussed the effect of the magnetic ordering on the electronic bands. A hybridization of the Bi and Te p-bands close to the Fermi level, which are responsible for the topological character in the MBST family, and the Mn d-bands, which are further away from the Fermi level, could be detected.…”

Section: Resultsmentioning

confidence: 99%

“…The antiferromagnetic order affects this hybridization, since below the ordering temperature the ferromagnetic layers are interacting differently compared to the layers above T N . Depending on an even or odd number of magnetic topological layers, a QAH insulator or axion insulator can be created [23]. As a result, a magnetic gap at the topological surface states (TSS) is generated, which could be a reason for the observed decrease of the free charge carrier density.…”

Section: Resultsmentioning

confidence: 99%

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Infrared study of the layered, magnetic insulator Mn(Bi$_{0.07}$Sb$_{0.93}$)$_2$Te$_4$ at low temperatures

Köpf,

Lee,

Kumar

et al. 2022

Preprint

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Topological insulators with intrinsic magnetic ordering, potentially hosting rare quantum effects, recently attracted extensive attention. MnBi2Te4 is the first established example. The Sb-doped variant Mn(Bi1−xSbx)2Te4 shows a great variety of electronic properties depending on the Sb content x, such as shifts in the Fermi level and the Neel temperature TN, and the change of the free charge carrier type from n-to p-type at high Sb substitution ratios. Here, we investigate the effect of magnetic ordering on the bulk electronic structure of Mn(Bi1−xSbx)2Te4 with high Sb content x = 0.93 by temperature-dependent reflectivity measurements over a broad frequency range. We observe anomalies in the optical response across TN when the antiferromagnetic order sets, which suggests a coupling between the magnetic ordering and the electronic structure of the material.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Infrared study of the layered, magnetic insulator Mn(Bi$_{0.07}$Sb$_{0.93}$)$_2$Te$_4$ at low temperatures

Köpf,

Lee,

Kumar

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…Currently, the MnBi 2 Te 4 has been considered as a topological insulator and with many other interesting properties. [ 70,71 ] However, its amorphous phase is still little studied before. Therefore, our work can be timely to recall the attention to its new application.…”

Section: Resultsmentioning

confidence: 99%

High‐Throughput Screening for Phase‐Change Memory Materials

Liu

Zheng

et al. 2021

Adv Funct Materials

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Phase change memory (PCM) is an emerging non-volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge-Sb-Te (GST) alloy based on experimental "trialand-error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational highthroughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge 2 Bi 2 Te 5 , GeAs 4 Te 7 , GeAs 2 Te 4 , so on and other candidates that have not been reported, such as TlBiTe 2 , TlSbTe 2 , CdPb 3 Se 4 , etc. Compared with GST, materials with close cohesive energy include AgBiTe 2 , TlSbTe 2 , As 2 Te 3 , TlBiTe 2 , etc., indicating possible low power consumption. Through further melt-quenching molecular dynamic calculation and structural/electronic analyses, Ge 2 Bi 2 Te 5 , CdPb 3 Se 4 , MnBi 2 Te 4 , and TlBiTe 2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big-data applications.

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“…A natural axion insulator was discovered in layered compound MnBi2Te4, in which the necessary magnetic profile was achieved through an intrinsic antiferromagnetic coupling of the adjacent atomic layers. Furthermore, upon applying a magnetic field to control the arrangement of the interlayer spins in MnBi2Te4, the states of QAH insulators and axion insulators become interchanged [11][12][13][14][15][16][17][18][19][20]. Axion insulators and Chern insulators have recently been realized in mechanically exfoliated MnBi2Te4 flakes [12,[21][22][23], but such flakes are fragile and have small and irregular shapes, thus preventing the large-scale fabrication of devices that utilize the QAH effect.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

Chang

Chuang

et al. 2021

Nanomaterials

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The intrinsic magnetic topological insulator MnBi2Te4 has attracted much attention due to its special magnetic and topological properties. To date, most reports have focused on bulk or flake samples. For material integration and device applications, the epitaxial growth of MnBi2Te4 film in nanoscale is more important but challenging. Here, we report the growth of self-regulated MnBi2Te4 films by the molecular beam epitaxy. By tuning the substrate temperature to the optimal temperature for the growth surface, the stoichiometry of MnBi2Te4 becomes sensitive to the Mn/Bi flux ratio. Excessive and deficient Mn resulted in the formation of a MnTe and Bi2Te3 phase, respectively. The magnetic measurement of the 7 SL MnBi2Te4 film probed by the superconducting quantum interference device (SQUID) shows that the antiferromagnetic order occurring at the Néel temperature 22 K is accompanied by an anomalous magnetic hysteresis loop along the c-axis. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) at 80 K reveals a Dirac-like surface state, which indicates that MnBi2Te4 has topological insulator properties in the paramagnetic phase. Our work demonstrates the key growth parameters for the design and optimization of the synthesis of nanoscale MnBi2Te4 films, which are of great significance for fundamental research and device applications involving antiferromagnetic topological insulators.

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MnBi2Te4-family intrinsic magnetic topological materials

Cited by 85 publications

References 38 publications

Infrared study of the layered, magnetic insulator Mn(Bi$_{0.07}$Sb$_{0.93}$)$_2$Te$_4$ at low temperatures

Infrared study of the layered, magnetic insulator Mn(Bi$_{0.07}$Sb$_{0.93}$)$_2$Te$_4$ at low temperatures

High‐Throughput Screening for Phase‐Change Memory Materials

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

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