MnSb inclusions in the GaSb matrix studied by X-ray absorption spectroscopy

Abstract

The MBE processes were performed in order to form the MnSb inclusions. Two kinds of substrates (GaSb and GaAs) as well as growth temperatures (450°C and 520°C) were examined. The SEM imaging was performed to determine the shape and size of formed inclusions. In all samples the inclusions of few hundred nm were formed. Their shapes depended strongly on the type of substrate while the size slightly increases with the growth temperature. The X-ray absorption techniques were used to monitor the local structure around Mn atoms and confirmed that the neighborhood of Mn atoms in the layers was close to that of the MnSb reference powder. We succeed in the formation of the GaSb layers with Mn assembled only into MnSb inclusions on both types of substrates: GaAs(111)A and GaSb(100). However, in case of the GaAs(111)A substrates, the atomic order around Mn atoms in MnSb inclusions is less perfect than in case of the GaSb(100) substrates.

Complexes and Clusters

“…Clustering and anticlustering have here the meaning explained at Sect. 5.1 and a review of the vast literature about heterogeneous inclusions and cluster formation in semiconductors, even at the microscopic [54] and nanoscopic scale range [55] is out of the scope of this section.…”

First-principles calculations of the electronic and structural properties of GaSb

“…Antimonides have attracted greater interest due to their prospective applications in rechargeable lithium batteries as anode material [5,6]. GaSb is a good candidate for the fabrication of thermophotovoltaic cells with low temperature systems [3], as well as in applications in spintronic devices when Mn atoms are introduced in the GaSb matrix [7,8], super-lattices [9], and spin efficient injectors in semiconductors, among others. In addition, due to their high electronic mobility, antimonide compounds are commonly used in the application of the fabrication of other electronic devices [10,11].…”