MnSi and MnSi2−x single crystals growth by Ga flux method and properties

Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth

“…The solution growth of silicide bulk crystals has been investigated for MnSi 1.7 , and faceted surfaces were observed on the grown MnSi 1.7 crystal. 16 The shape of the crystals is approximately similar to that of the silicide particles obtained in the present work, although the asymmetric shape of the crystal shown in Ref. 16 indicates the formation of polycrystalline domains.…”

“…16 The shape of the crystals is approximately similar to that of the silicide particles obtained in the present work, although the asymmetric shape of the crystal shown in Ref. 16 indicates the formation of polycrystalline domains. In addition, it has been also shown that such a higher symmetric shaped silicide particles were only formed in the Au-Si solution, and defective irregular shaped Si nanowires were grown for the use of only MnCl 2 and Si sources without the Au catalyst.…”

Investigation on microstructures of MnSix thin films by Raman spectroscopy

“…For this annealed film, except for those of the silicon substrate, no other peaks were observed in the XRD pattern. A similar feature of three well-defined peaks in Raman spectrum has been reported for Ir silicide, IrSi 1.75 [6] ; therefore, we may attribute those three well-defined peaks to manganese silicide, and it indicates that Mn silicide is formed in the film during annealing at 500 • C. After annealing at a higher temperature of 600 • C, the two broad humps corresponding to amorphous Si disappeared, while the peaks corresponding to crystalline silicon and Mn silicide became more intense, indicating further crystallization of Si and Mn silicide in the film annealed at 600 • C. For this annealed film, several weak peaks corresponding to tetragonal Mn silicide, MnSi 1.73 , were observed in the XRD pattern, [3,11] which confirms our conclusion that the set of three well-defined Raman peaks located at 276, 301, and 318 cm −1 originates from Mn silicide, MnSi 1.73 . Figure 2 shows the Raman spectra of as-grown and annealed MnSi x thin films with a Mn concentration of 30%.…”

“…And likewise, more intense peaks of tetragonal Mn silicide, MnSi 1.73 , are observed in the XRD pattern of this asgrown film. [3,11] The weak peaks located at 110, 255, and 509 cm −1 may also be attributed to Mn silicide, MnSi 1.73 . After thermal annealing at the high temperatures of 500 or 600 • C, neither the peak intensities of silicide nor those of crystalline Si change significantly as shown in Fig.…”

Synthesis of Si nanowires using Au catalyst accompanied with silicide nanoparticle formation

“…The lattice mismatch between MnSi 1.7 and Si at the interface would be partially relaxed by the inclination of growth directions at the titled interface [10]. The solution growth of silicide bulk crystals has been investigated for MnSi 1.7 , and faceted surfaces were observed on the grown MnSi 1.7 crystal [11]. The shape of the crystals is approximately similar to that of the silicide particles obtained in the present work, although the asymmetric shape of the crystal shown in Ref.…”