2002
DOI: 10.1016/s0040-6090(02)00580-1
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Mo influence on SnO2 thin films properties

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Cited by 21 publications
(6 citation statements)
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“…MoO 3 is n-type semiconductor that can change the acidity performances of SnO 2 surfaces against reactivity with different gases [11,12]. The introduction of 4 MoO 3 reduces the electrical conductivity of SnO 2 by two orders of magnitude in air, which may be due to the transfer of electrons trapped at oxygen vacancies to Mo 6+ [13].…”
Section: Introductionmentioning
confidence: 99%
“…MoO 3 is n-type semiconductor that can change the acidity performances of SnO 2 surfaces against reactivity with different gases [11,12]. The introduction of 4 MoO 3 reduces the electrical conductivity of SnO 2 by two orders of magnitude in air, which may be due to the transfer of electrons trapped at oxygen vacancies to Mo 6+ [13].…”
Section: Introductionmentioning
confidence: 99%
“…The reported operating temperatures and detection limits of NO 2 are quite high [34][35][36][37][38][39][40][41][42][43][44][45].…”
Section: Introductionmentioning
confidence: 99%
“…The optical transparency and electrical conductivity in TCOs is achieved by increasing the number of free charge carriers through intrinsic defects, such as oxygen vacancies, or through extrinsic dopants, typically higher valency metal cations [13][14]. In literature various dopants are used to improve the electrical properties of tin oxide (SnO 2 ) [15][16]. Among these dopants, Sb [14] and F [8] with n-type conductivity of SnO 2 thin films have shown to be the most achieved commercial use due to its low cost and simplicity.…”
Section: Introductionmentioning
confidence: 99%