2013
DOI: 10.1016/j.physleta.2013.03.013
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Mobility edge phenomenon in a Hubbard chain: A mean field study

Abstract: We show that a tight-binding one-dimensional chain composed of interacting and non-interacting atomic sites can exhibit multiple mobility edges at different values of carrier energy in presence of external electric field. Within a mean field Hartree-Fock approximation we numerically calculate two-terminal transport by using Green's function formalism. Several cases are analyzed depending on the arrangements of interacting and non-interacting atoms in the chain. The analysis may be helpful in designing mesoscal… Show more

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Cited by 22 publications
(25 citation statements)
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“…Given that the major differences between OPV binary and ternary blends come from variation in the donor material composition, we focused our investigation on hole transport, hypothesized to primarily occur in the donor region of OPVs 8 by hopping. Charge transfer parameters for hopping transport in semiconducting systems are commonly computed using either constrained DFT (CDFT), [82][83][84] excited state wavefunction methods, 85 or model Hamiltonians, [86][87][88] and then subsequently used to estimate transfer rate using, e.g. Marcus theory.…”
Section: Methodsmentioning
confidence: 99%
“…Given that the major differences between OPV binary and ternary blends come from variation in the donor material composition, we focused our investigation on hole transport, hypothesized to primarily occur in the donor region of OPVs 8 by hopping. Charge transfer parameters for hopping transport in semiconducting systems are commonly computed using either constrained DFT (CDFT), [82][83][84] excited state wavefunction methods, 85 or model Hamiltonians, [86][87][88] and then subsequently used to estimate transfer rate using, e.g. Marcus theory.…”
Section: Methodsmentioning
confidence: 99%
“…In presence of a finite bias V between the source and drain, an electric field is developed across the chain and hence its site energies are voltage dependent 19,20 . It gives…”
Section: Model and Theoretical Frameworkmentioning
confidence: 99%
“…The dependence of ǫ i (V ) is associated with electron screening as well as bare electric field at the junction. In the absence of any screening electric field is uniform across the junction 19,20 which makes ǫ i (V ) = V /2 − iV /(N + 1) (linear variation, red line of Fig. 2) for a N -site chain.…”
Section: Model and Theoretical Frameworkmentioning
confidence: 99%
“…It is well known that for an infinite one-dimensional (1D) random (uncorrelated) disordered lattice all states are localized irrespective of disorder strength W 1,2 . As for this system the critical disorder strength is zero one never expects any kind of localization-to-delocalization transition upon the variation of W , which circumvents the appearance of mobility edge (ME) [3][4][5] in energy band spectrum that separates a conducting zone from the localized one. The existence of mobility edge always draws significant impact particularly in the aspect of its applications in designing possible electronic devices like switching action, current transfer processes, and to name a few.…”
Section: Introductionmentioning
confidence: 99%