Mobility extraction in SOI MOSFETs with sub 1nm body thickness

Schmidt, M.; Lemme, Max C.; Gottlob, H. D. B.; Driussi, F.; Selmi, L.; Kurz, H.

doi:10.1016/j.sse.2009.09.017

Cited by 63 publications

(48 citation statements)

References 16 publications

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“…This trend can be physically explained by the freeze-out of the silicon dopants outside the GRC channel as reported in [13]. Moreover, for the UTB device, the extracted 0 values are similar to those expected in similar silicon based devices [14], while, for GRC device, the corresponding 0 values are found to be very low and are inconsistent with such kind of fully depleted SOI MOSFETs [15]. Consequently, this corroborates the influence of a series resistance in the GRC's case.…”

Section: Interpretation and Discussionsupporting

confidence: 79%

“…Note that if at 300 K, the slope of the versus GS plot is 1 for 80 m/8 m, it is found to be much lower than 1 (0.58) at 77 K. This seems to indicate a temperature dependence of the limit case presented in (14). However, the slope of the versus GS is not critical issue for the parameter extraction method and is ignored.…”

Section: -Function Analysis In the Saturation Domain For Grcmentioning

confidence: 93%

See 1 more Smart Citation

Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

Karsenty

Chelly

2014

Active and Passive Electronic Components

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The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the sameW/Lratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics (IDS-VDSandIDS-VGS) of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using aY-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of theY-function analysis and show that a new function calledZcan be used to extract the series resistance in the saturation regime.

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Section: Interpretation and Discussionsupporting

confidence: 79%

Section: -Function Analysis In the Saturation Domain For Grcmentioning

confidence: 93%

Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

Karsenty

Chelly

2014

Active and Passive Electronic Components

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“…To make a fair comparison of the mobility in GNRs with that in Si, the following issue should be considered. Ultimately scaled Si MOSFETs need UTB SOI (ultrathin‐body silicon on insulator) channels or ultra‐small‐diameter Si nanowire channels to suppress undesirable short‐channel effects, and in these channels the carrier mobility is seriously degraded compared to bulk Si and Si MOS structures with thick or bulk body, see the last entries in Table .…”

Section: Preparation and Device‐relevant Properties Of Gnrsmentioning

confidence: 99%

Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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“…A generalized scaling theory for the ATB field-effect transistor (ATB-FET) geometry however, has not been presented, which is different from the well established ultrathin-body (UTB) structures which have comparatively large body thicknesses with a well-defined semiconductor dielectric medium [7]- [9]. In this letter, a new generalized analytical solution is derived to calculate the electrostatic potential in the ATB-FET geometry which is applicable to transistors based on single-layer and few-layer graphene as well as conventional semiconductor materials with body thicknesses below ~ 1nm [10]. On the other hand, carrier transport properties will depend on the individual bandstructure of the specific material.…”

Section: Introductionmentioning

confidence: 99%

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

Qin

Xing

et al. 2010

IEEE Electron Device Lett.

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A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, λ eff , is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that even for a thick SiO 2 back oxide λ eff can be improved efficiently by thinner top oxide thickness, and to some extent, with high-k dielectrics. The model is then applied to self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier field-effect transistors (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for large λ eff , the scaling is limited by the conventional electrostatic short channel effects (SCEs). On the other hand, for small λ eff , the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100mV/dec is still possible with a sub-10nm gate length in GNR SB-FETs.2

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Mobility extraction in SOI MOSFETs with sub 1nm body thickness

Cited by 63 publications

References 16 publications

Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime UsingYandZFunctions

Graphene Nanoribbons for Electronic Devices

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

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