We have developed a method to probe the temperature of surface state electrons (SSE) above a superfluid Helium-4 surface using the Seebeck effect. In contrast to previously used SSE thermometry, this technique does not require detailed knowledge of the non-linear mobility. We demonstrate the use of this method by measuring energy relaxation of SSE at 1.6 K in a microchannel device with 0.6µm deep helium. In this regime, both vapor atom scattering and 2-ripplon scattering contribute to energy relaxation to which we compare our measurements. We conclude that this technique provides a reliable measure of electron temperature while requiring a less detailed understanding of the electron interactions with the environment than previously utilized thermometry techniques.Surface state electrons (SSE) above superfluid Helium-4 constitute a remarkable non-degenerate twodimenstional electron gas (2DEG) [1,2]. These SSE float in the vacuum ∼ 11nm above the superfluid surface due to a confining potential formed by an attractive image charge in the helium and a repulsive barrier at the surface. SSE exhibit exceptional isolation from the environment. Elastic scattering processes are often used to describe the interaction of SSE with the environment using the electron mobility, which can reach values exceeding 10 8 cm 2 /Vs [3]. Of equal importance are the inelastic scattering processes which are characterized with the energy relaxation of SSE.There is a great deal of interest in understanding inelastic scattering of the SSE. Inelastic processes [4][5][6][7] are fundamental for understanding and describing a wide variety of SSE phenomena including non-linear transport [4,[8][9][10][11] and microwave absorption line shapes [12][13][14][15]. Further, renewed interest in these processes has emerged with the realization that the energy relaxation rates determine the coherence times of Rydberg state based SSE qubits [6,[16][17][18][19][20].Electron thermometry is crucial for experimental measurement of energy relaxation, but thermometry of hot SSE presents a serious challenge. The lack of ohmic contacts and the exceptionally low densities preclude the use of many electron thermometry techniques developed for solid state systems [21]. Instead, a common measure of the electron temperature, T e , has relied on the non-linear mobility of SSE [9,10,[22][23][24][25][26]. While this approach has proven fruitful, the relationship between the mobility and T e can be complex and is known only under limited experimental conditions. While other approaches to electron thermometry have been demonstrated for SSE, they are either confined to the Wigner crystal regime [27] or unable to measure the temperature of hot electrons [28].In this paper, we describe and demonstrate the use of the Seebeck effect to measure the temperature of hot SSE in a helium microchannel device. With the known thermopower of a non-degenerate 2DEG, we show that density measurements of a locally heated region of SSE can be related to a change in electron temperature. Follow-b...