Mobility of modulation doped AlGaAs/low-temperature MBE-grown GaAs heterostructures

Schulte, D.; Subramanian, S.; Ungier, L.; Bhattacharyya, Kankan; Arthur, John R.

doi:10.1007/bf02659699

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…Nanyang Technological University LibraryChapter 4 Growth and characterization of C-doped GaAs4.3.4 PL results of C-doped GaAsThe 4 K PL spectra of the GaAs samples grown at different C doping levels are shown inFig.4.10. The spectrum of the unintentionally doped GaAs sample (curve (a)) with hole concentration of 6.39xl0 15 cm"3 shows the usual features of band edge emission consisting of acceptor-bound excitons (A°-X) and band-to-acceptor (e-A°) transitions[70]. At increasing C doping level (hole concentration > 10 18 cm" 3 ), the excitonic features vanish, and the e-A° transition peak broadens to become two distinct peaks, indicated as peak 1 and 2, as shown inFig.4.10.…”

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Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors

Zhang¹

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The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and Ino.53Gao.47As materials and C-doped GaAsbased and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties. Especially, me compensation effects of dicaron defects have been studied. The optimization of me growth conditions has been carried out and discussed, which benefits the development of Cdoped GaAs as base layer of GalnP/GaAs HBT devices. Preliminary results of Cdoped GalnP/GaAs HBT devices demonstrated poor characteristics due to trap-related recombination. Witii better control of growth process, improved performances of GalnP/GaAs HBTs have been obtained. Elevated temperature properties revealed good material quality of these devices. C-doped InP/InGaAs SHBTs and composite collector DHBTs have been grown and studied, and the promising device performance demonstrate the potential for commercial wireless communication applications. The complex breakdown characteristics of composite collector DHBTs have been investigated.

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Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors

Zhang¹

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Photoluminescence from modulation doped AlGaAs/ low-temperature molecular beam epitaxy-grown GaAs heterostructures

Schulte

Subramanian

Ungier

et al. 1995

Journal of Applied Physics

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Photoluminescence (PL) results from a novel modulation doped AlGaAs/ low-temperature molecular beam epitaxially-grown-GaAs (LT-GaAs MODFET) heterostructure are reported. A new PL line at 1.65 eV is consistently observed in all the LT-GaAs MODFET structures investigated. A spatially indirect transition from a two-dimensional electron gas at the heterojunction interface to the holes in AlGaAs is believed to be responsible for the observed 1.65 eV PL line. LT-GaAs MODFET structures in which LT-GaAs region is grown at 350 °C show additional lines lying in the band edge region as well as deep inside the band gap region of LT-GaAs.

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Carrier-removal rate and mobility degradation in heterojunction field-effect transistor structures

Jun

Subramanian

2002

IEEE Trans. Nucl. Sci.

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Mobility of modulation doped AlGaAs/low-temperature MBE-grown GaAs heterostructures

Cited by 4 publications

References 14 publications

Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors

Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors

Photoluminescence from modulation doped AlGaAs/ low-temperature molecular beam epitaxy-grown GaAs heterostructures

Carrier-removal rate and mobility degradation in heterojunction field-effect transistor structures

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