Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Li, Yao; Zhang, Jinfeng; Liu, Guipeng; Ren, Zeyang; Zhang, Jincheng; Hao, Yue

doi:10.1002/pssr.201700401

Cited by 39 publications

(18 citation statements)

References 48 publications

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“…The existence of many pits and edges in the unpolished diamond surface, serves as activation sites, resulting in a higher carrier density compared to the commonly reported values in the literature [9]. The carrier mobility is strongly affected by the ionized impurity scattering in diamond 2DHGs due to the small distance between the hole-channel and negative charges in the oxide [1], [10]. For similar hole density of 10 14 cm -2 , singlecrystalline diamond presented mobilities as low as 3 cm 2 /V.s [11], which in the present case were even lower due to the small diamond grains in the polycrystalline layer and the rougher surface.…”

Section: Resultsmentioning

confidence: 99%

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Soleimanzadeh

Naamoun²,

Khadar

et al. 2020

IEEE Electron Device Lett.

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In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate highperformance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization of the microwave-plasma chemical-vapor-deposition of diamond on GaN, the polycrystalline layer was hydrogenated to form a 2D hole-gas at the surface, acting as p-channel. Relying on a rather simple fabrication process, these devices exhibited excellent electrical and thermal performances with on-off ratio of 10 9 , breakdown voltage of 400 V, specific on-resistance of 84 mΩ•cm 2 , and thermal conductivities higher than 900 W/m•K. The presented hetero-integration technology provides a promising platform for future complementary logic operations, gate drivers, complementary power switch applications such as integrated power inverters and converters, simultaneously serving as a very efficient thermal management solution in high power density applications.

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Section: Resultsmentioning

confidence: 99%

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Soleimanzadeh

Naamoun²,

Khadar

et al. 2020

IEEE Electron Device Lett.

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“…For the heteroepitaxial diamond MOSFET, μ FE first increases with the negative V gs lower than − 7 V and then decreases with higher negative V gs . The latter would be caused by acoustic phonon or surface roughness scattering [44,[57][58][59]. According to the log |I ds |-V gs characteristics, S is estimated to be 355 mV/dec.…”

Section: Inversion-type P-channel Mosfets On Heteroepitaxial Diamond Substratesmentioning

confidence: 99%

Inversion-type p-channel diamond MOSFET issues

Zhang

Matsumoto

Yamasaki

et al. 2021

Journal of Materials Research

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This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (NP) of the n-type body on field-effect mobility (μFE) and interface state density (Dit) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low μFE and one main reason is high Dit. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low C–V method and the conductance method, providing further insights into the trap properties at Al2O3/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs. Graphic abstract

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“…One cause of this is the Coulomb interactions between the 2DHG and the compensating negative charge (i.e., the ionized surface acceptors). This induces significant scattering, particularly at low-to-intermediate temperatures [12,13]. Moreover, this scattering mechanism is exacerbated as the sheet density increases, as evidenced by the reduction in mobility for the TMOs with higher work functions [4].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

Peterson,

Malakoutian,

et al. 2020

Preprint

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Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic phonons are included. Using a Schrödinger/Poisson solver, the heavy hole, light hole, and split-off bands are treated separately. To compare the calculations with experimental data, Hall-effect structures were fabricated and measured at temperatures ranging from 25 to 700 K, with hole sheet densities ranging from 2 to 6×10 12 cm −2 and typical mobilities measured from 60 to 100 cm 2 /(V•s) at room temperature. Existing data from literature was also used, which spans sheet densities above 1×10 13 cm −2 . Our analysis indicates that for low sheet densities, surface impurity scattering by charged acceptors and surface roughness are not sufficient to account for the low mobility. Moreover, the experimental data suggests that long-range potential fluctuations exist at the diamond surface, and are particularly enhanced at lower sheet densities. Thus, we propose a second type of surface impurity scattering which is caused by disorder related to the C-H dipoles.

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Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Cited by 39 publications

References 48 publications

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

Inversion-type p-channel diamond MOSFET issues

Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond

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